MMBZ10VAL NXP Semiconductors, MMBZ10VAL Datasheet - Page 2

• Manufacturer Part Number: MMBZ10VAL
• Description: DIODE,DUAL TVS,UNI DIR,40W,6.5V,SOT23
• Manufacturer: NXP Semiconductors

Specifications of MMBZ10VAL

• Reverse Stand-off Voltage Vrwm: 6.5V
• Breakdown Voltage Range: 9.5V To 10.5V
• Clamping Voltage Vc Max: 14.2V
• Diode Configuration: Common Anode
• Peak Pulse Current Ippm: 1.7A
• Diode Case: RoHS Compliant

NXP Semiconductors
2. Pinning information
MMBZXAL_SER_2
Product data sheet
1.4 Quick reference data
Table 2.
T
Table 3.
Symbol
Per diode
V
C
Pin
1
2
3
amb
RWM
d
= 25
°
C unless otherwise specified.
Parameter
reverse standoff voltage
diode capacitance
Description
cathode (diode 1)
cathode (diode 2)
common anode
Quick reference data
Pinning
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
Rev. 02 — 10 December 2009
Low capacitance unidirectional double ESD protection diodes
Conditions
f = 1 MHz; V
Simplified outline
R
1
= 0 V
MMBZxAL series
3
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2
Typ
-
-
-
-
-
-
-
-
-
-
-
210
175
150
155
130
110
70
65
48
45
Graphic symbol
85
© NXP B.V. 2009. All rights reserved.
1
Max
3
3
4.5
6
6.5
8.5
12
14.5
17
22
26
280
230
200
200
170
140
105
90
80
60
55
3
006aaa154
2
V
V
V
V
V
V
V
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
Unit
V
V
V
V
pF
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