MMBZ10VAL NXP Semiconductors, MMBZ10VAL Datasheet - Page 11

• Manufacturer Part Number: MMBZ10VAL
• Description: DIODE,DUAL TVS,UNI DIR,40W,6.5V,SOT23
• Manufacturer: NXP Semiconductors

Specifications of MMBZ10VAL

• Reverse Stand-off Voltage Vrwm: 6.5V
• Breakdown Voltage Range: 9.5V To 10.5V
• Clamping Voltage Vc Max: 14.2V
• Diode Configuration: Common Anode
• Peak Pulse Current Ippm: 1.7A
• Diode Case: RoHS Compliant

NXP Semiconductors
MMBZXAL_SER_2
Product data sheet
Fig 7.
Fig 8.
(1) MMBZ5V6AL: V
(2) MMBZ6V8AL: V
(3) MMBZ9V1AL: V
(4) MMBZ27VAL: V
−V
CL
ESD protection diode
Reverse leakage current as a function of ambient temperature; typical values
V-I characteristics for a unidirectional
−V
BR
−V
RWM
−
P-N
RWM
RWM
RWM
RWM
+
= 22 V
= 3 V
= 4.5 V
= 6 V
(nA)
I
RM
I
−I
−I
10
10
10
10
−I
−I
10
10
RM
R
PPM
PP
10
−1
−2
−3
−4
1
3
2
−75
Rev. 02 — 10 December 2009
006aab324
−25
Low capacitance unidirectional double ESD protection diodes
(1)
(2)
(3)
(4)
V
25
Fig 9.
75
−V
CL
−V
T
125
V-I characteristics for a bidirectional
ESD protection diode
amb
BR
006aab841
−V
(°C)
RWM
175
MMBZxAL series
I
PPM
I
PP
I
RM
I
R
−I
−I
−I
−I
RM
R
PP
PPM
−
© NXP B.V. 2009. All rights reserved.
V
RWM
+
006aab325
V
BR
11 of 17
V
CL