MMBZ10VAL NXP Semiconductors, MMBZ10VAL Datasheet - Page 3

• Manufacturer Part Number: MMBZ10VAL
• Description: DIODE,DUAL TVS,UNI DIR,40W,6.5V,SOT23
• Manufacturer: NXP Semiconductors

Specifications of MMBZ10VAL

• Reverse Stand-off Voltage Vrwm: 6.5V
• Breakdown Voltage Range: 9.5V To 10.5V
• Clamping Voltage Vc Max: 14.2V
• Diode Configuration: Common Anode
• Peak Pulse Current Ippm: 1.7A
• Diode Case: RoHS Compliant

NXP Semiconductors
3. Ordering information
4. Marking
MMBZXAL_SER_2
Product data sheet
Table 4.
Table 5.
[1]
Type number
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
Type number
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Ordering information
Marking codes
Package
Name
-
Rev. 02 — 10 December 2009
Low capacitance unidirectional double ESD protection diodes
Description
plastic surface-mounted package; 3 leads
Marking code
RR*
RS*
RT*
RU*
RV*
*H1
*H2
*H3
*H4
*H5
*H6
MMBZxAL series
[1]
© NXP B.V. 2009. All rights reserved.
SOT23
Version
3 of 17