MMBZ10VAL NXP Semiconductors, MMBZ10VAL Datasheet - Page 3
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MMBZ10VAL
Manufacturer Part Number
MMBZ10VAL
Description
DIODE,DUAL TVS,UNI DIR,40W,6.5V,SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.MMBZ27VAL235.pdf
(17 pages)
Specifications of MMBZ10VAL
Reverse Stand-off Voltage Vrwm
6.5V
Breakdown Voltage Range
9.5V To 10.5V
Clamping Voltage Vc Max
14.2V
Diode Configuration
Common Anode
Peak Pulse Current Ippm
1.7A
Diode Case
RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBZ10VAL
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
MMBZ10VALT1
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
MMBZ10VALT1G
Manufacturer:
ON/安森美
Quantity:
20 000
NXP Semiconductors
3. Ordering information
4. Marking
MMBZXAL_SER_2
Product data sheet
Table 4.
Table 5.
[1]
Type number
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
Type number
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Ordering information
Marking codes
Package
Name
-
Rev. 02 — 10 December 2009
Low capacitance unidirectional double ESD protection diodes
Description
plastic surface-mounted package; 3 leads
Marking code
RR*
RS*
RT*
RU*
RV*
*H1
*H2
*H3
*H4
*H5
*H6
MMBZxAL series
[1]
© NXP B.V. 2009. All rights reserved.
SOT23
Version
3 of 17