MMBZ10VAL NXP Semiconductors, MMBZ10VAL Datasheet - Page 15
MMBZ10VAL
Manufacturer Part Number
MMBZ10VAL
Description
DIODE,DUAL TVS,UNI DIR,40W,6.5V,SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.MMBZ27VAL235.pdf
(17 pages)
Specifications of MMBZ10VAL
Reverse Stand-off Voltage Vrwm
6.5V
Breakdown Voltage Range
9.5V To 10.5V
Clamping Voltage Vc Max
14.2V
Diode Configuration
Common Anode
Peak Pulse Current Ippm
1.7A
Diode Case
RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBZ10VAL
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
MMBZ10VALT1
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
MMBZ10VALT1G
Manufacturer:
ON/安森美
Quantity:
20 000
NXP Semiconductors
13. Revision history
Table 12.
MMBZXAL_SER_2
Product data sheet
Document ID
MMBZXAL_SER_2
Modifications:
MMBZXVAL_SER_1
Revision history
20091210
20080901
Release date
•
•
•
•
•
•
Type numbers MMBZ5V6AL, MMBZ6V2AL, MMBZ6V8AL, MMBZ9V1AL and
MMBZ10VAL added
Type numbers MMBZ12VAL/DG, MMBZ15VAL/DG, MMBZ18VAL/DG, MMBZ20VAL/DG,
MMBZ27VAL/DG, MMBZ33VAL/DG removed
Figure 5
Figure
Figure
Section 14 “Legal
6: added
10: updated
and 7: updated
Data sheet status
Product data sheet
Product data sheet
Rev. 02 — 10 December 2009
Low capacitance unidirectional double ESD protection diodes
information”: updated
Change notice
-
-
MMBZxAL series
Supersedes
MMBZXVAL_SER_1
-
© NXP B.V. 2009. All rights reserved.
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