GS816032BGT-200 GSI TECHNOLOGY, GS816032BGT-200 Datasheet - Page 8

18M SYNCH BURST SRAM 512KX32, SMD

GS816032BGT-200

Manufacturer Part Number
GS816032BGT-200
Description
18M SYNCH BURST SRAM 512KX32, SMD
Manufacturer
GSI TECHNOLOGY
Datasheet

Specifications of GS816032BGT-200

Memory Size
18Mbit
Clock Frequency
200MHz
Access Time
6.5ns
Supply Voltage Range
2.3V To 2.7V, 3V To 3.6V
Memory Case Style
TQFP
No. Of Pins
100
Operating Temperature Range
0°C To +70°C
Memory Configuration
512K X 32
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Byte Write Truth Table
Notes:
1.
2.
3.
4.
Rev: 1.03 9/2005
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Write all bytes
Write all bytes
All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs.
Byte Write Enable inputs B
All byte I/Os remain High-Z during all write operations regardless of the state of Byte Write Enable inputs.
Bytes “
Write byte a
Write byte b
Write byte c
Write byte d
Function
Read
Read
C
” and “
D
” are only available on the x32 and x36 versions.
GW
H
H
H
H
H
H
H
L
A
, B
B
, B
C
and/or B
BW
H
L
L
L
L
L
L
X
D
may be used in any combination with BW to write single or multiple bytes.
B
X
H
H
H
H
X
L
L
A
8/24
B
X
H
H
H
H
X
L
L
B
B
X
H
H
H
H
X
L
L
C
GS816018/32/36BT-250/200/150
B
X
H
H
H
H
X
L
L
D
Notes
2, 3, 4
2, 3, 4
2, 3, 4
2, 3
2, 3
1
1
© 2004, GSI Technology

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