GS816032BGT-200 GSI TECHNOLOGY, GS816032BGT-200 Datasheet - Page 11

• Manufacturer Part Number: GS816032BGT-200
• Description: 18M SYNCH BURST SRAM 512KX32, SMD
• Manufacturer: GSI TECHNOLOGY

Specifications of GS816032BGT-200

• Memory Size: 18Mbit
• Clock Frequency: 200MHz
• Access Time: 6.5ns
• Supply Voltage Range: 2.3V To 2.7V, 3V To 3.6V
• Memory Case Style: TQFP
• No. Of Pins: 100
• Operating Temperature Range: 0°C To +70°C
• Memory Configuration: 512K X 32
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:
1.
2.
3.
Rev: 1.03 9/2005
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from Read cycles to Write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
X
X
CW
First Write
Burst Write
W
Simplified State Diagram with G
W
CW
11/24
W
CR
R
CR
R
Deselect
X
CW
W
CW
W
R
CR
First Read
Burst Read
R
GS816018/32/36BT-250/200/150
R
CR
X
X
© 2004, GSI Technology