FDS89141 Fairchild Semiconductor, FDS89141 Datasheet

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... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDS89141 FDS89141 ©2010 Fairchild Semiconductor Corporation FDS89141 Rev.C ® MOSFET General Description = 3.5 A This N-Channel D Semiconductor‘s advanced Power Trench = 2 been optimized for r ...

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... Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. 3. Starting T = 25° 3 ©2010 Fairchild Semiconductor Corporation FDS89141 Rev 25°C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 °C ...

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... Figure 3. Normalized On-Resistance vs Junction Temperature 18 μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDS89141 Rev 25°C unless otherwise noted 5 μ s 2.0 2.5 3.0 400 300 200 100 50 75 100 125 150 ...

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... Switching Capability THIS AREA IS LIMITED BY r DS(on) 0.1 SINGLE PULSE T = MAX RATED 135 C/W θ 0. 0.005 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDS89141 Rev 25°C unless otherwise noted J 400 = 25 V 100 100 125 ...

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... Typical Characteristics ( N-Channel) 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 13. ©2010 Fairchild Semiconductor Corporation FDS89141 Rev 25°C unless otherwise noted J SINGLE PULSE 135 C/W θ RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve NOTES: ...

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... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDS89141 Rev. C ® PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...