BFU630F,115 NXP Semiconductors, BFU630F,115 Datasheet - Page 8

• Manufacturer Part Number: BFU630F,115
• Description: TRANSISTOR NPN SOT343F
• Manufacturer: NXP Semiconductors

Specifications of BFU630F,115

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5.5V
• Frequency - Transition: 21GHz
• Noise Figure (db Typ @ F): 0.75dB ~ 1.3dB @ 1.5GHz ~ 5.8GHz
• Gain: 13dB ~ 22.5dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 90 @ 5mA, 2V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Package / Case: SOT-343F
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 5.5 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 3 mA
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 90
• Gain Bandwidth Product Ft: 21 GHz
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
8. Package outline
Fig 11. Package outline SOT343F
BFU630F
Product data sheet
Plastic surface-mounted flat pack package; reverse pinning; 4 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT343F
max
0.75
0.65
A
0.4
0.3
b
w
p
M
A
0.7
0.5
b
1
3
2
IEC
b
0.25
0.10
p
c
y
2.2
1.8
D
e
D
1
e
1.35
1.15
JEDEC
E
All information provided in this document is subject to legal disclaimers.
b
1
REFERENCES
1.3
e
0
Rev. 1 — 15 December 2010
4
1
1.15
e
1
A
w
JEITA
H
2.2
2.0
M
E
scale
A
1
0.48
0.38
L
p
0.2
w
2 mm
0.1
y
A
NPN wideband silicon RF transistor
detail X
H
PROJECTION
E
EUROPEAN
E
L
p
c
BFU630F
© NXP B.V. 2010. All rights reserved.
X
ISSUE DATE
05-07-12
06-03-16
SOT343F
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