BFU630F,115 NXP Semiconductors, BFU630F,115 Datasheet - Page 5

• Manufacturer Part Number: BFU630F,115
• Description: TRANSISTOR NPN SOT343F
• Manufacturer: NXP Semiconductors

Specifications of BFU630F,115

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5.5V
• Frequency - Transition: 21GHz
• Noise Figure (db Typ @ F): 0.75dB ~ 1.3dB @ 1.5GHz ~ 5.8GHz
• Gain: 13dB ~ 22.5dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 90 @ 5mA, 2V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Package / Case: SOT-343F
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 5.5 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 3 mA
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 90
• Gain Bandwidth Product Ft: 21 GHz
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
Table 7.
T
[1]
BFU630F
Product data sheet
Symbol
IP3
j
Fig 2.
= 25
G
(mA)
(10) I
p(max)
I
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
(7) I
(8) I
(9) I
C

25
20
15
10
C unless otherwise specified
5
0
0
T
collector-emitter voltage; typical values
Collector current as a function of
Parameter
third-order intercept point
B
B
B
B
B
B
B
B
B
B
is the maximum power gain, if K > 1. If K < 1 then G
amb
Characteristics
= 200 A
= 180 A
= 160 A
= 140 A
= 120 A
= 100 A
= 80 A
= 60 A
= 40 A
= 20 A
= 25 C.
1
2
(10)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
…continued
3
All information provided in this document is subject to legal disclaimers.
4
001aam813
V
CE
(V)
Rev. 1 — 15 December 2010
5
Conditions
I
Z
C
S
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
= 30 mA; V
= Z
p(max)
L
= 50 ; T
= MSG.
Fig 3.
CE
h
FE
200
150
100
= 2.5 V;
50
amb
0
0
V
DC current gain as a function of collector
current; typical values
CE
= 25 C
= 2 V; T
NPN wideband silicon RF transistor
amb
10
= 25 C.
Min Typ
-
-
-
-
20
BFU630F
I
© NXP B.V. 2010. All rights reserved.
C
25.5
26
26.5
27.5
001aam814
(mA)
Max Unit
-
-
-
-
30
5 of 12
dBm
dBm
dBm
dBm