BFU630F,115 NXP Semiconductors, BFU630F,115 Datasheet - Page 3

• Manufacturer Part Number: BFU630F,115
• Description: TRANSISTOR NPN SOT343F
• Manufacturer: NXP Semiconductors

Specifications of BFU630F,115

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5.5V
• Frequency - Transition: 21GHz
• Noise Figure (db Typ @ F): 0.75dB ~ 1.3dB @ 1.5GHz ~ 5.8GHz
• Gain: 13dB ~ 22.5dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 90 @ 5mA, 2V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Package / Case: SOT-343F
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 5.5 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 3 mA
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 90
• Gain Bandwidth Product Ft: 21 GHz
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
4. Marking
5. Limiting values
6. Thermal characteristics
BFU630F
Product data sheet
Table 4.
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Table 6.
Type number
BFU630F
Symbol
V
T
Symbol
R
V
V
I
P
T
C
Fig 1.
stg
j
CBO
CEO
EBO
tot
th(j-sp)
T
sp
is the temperature at the solder point of the emitter lead.
Power derating curve
Parameter
thermal resistance from junction to solder point
Marking
Limiting values
Thermal characteristics
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
storage temperature
junction temperature
All information provided in this document is subject to legal disclaimers.
(mW)
Rev. 1 — 15 December 2010
P
tot
300
250
200
150
100
50
0
0
Marking
D2*
40
Conditions
open emitter
open base
open collector
T
sp
 90 C
80
NPN wideband silicon RF transistor
120
T
001aam812
[1]
sp
(°C)
Min
-
-
-
-
-
65
-
Description
* = p : made in Hong Kong
* = t : made in Malaysia
* = w : made in China
160
Conditions
Max
16
5.5
2.5
30
200
+150
150
BFU630F
© NXP B.V. 2010. All rights reserved.
Typ
300
Unit
V
V
V
mA
C
C
mW
Unit
K/W
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