BFG67,235 NXP Semiconductors, BFG67,235 Datasheet - Page 5

• Manufacturer Part Number: BFG67,235
• Description: TRANS RF NPN 8GHZ 10V SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BFG67,235

• Package / Case: TO-253-4, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 380mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 15mA, 5V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 50 mA
• Power Dissipation: 380 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
handbook, halfpage
handbook, halfpage
NPN 8 GHz wideband transistors
(GHz)
V
V
h
CE
CE
T f
Fig.4
FE
120
= 5 V.
= 8 V; T
Fig.6
80
40
10
4
8
6
2
0
0
0
0
DC current gain as a function of collector
current.
amb
Transition frequency as a function of
collector current.
= 25 ; f = 2 GHz.
10
20
20
40
30
I
C
I
C
(mA)
MBB301
(mA)
MBB303
Rev. 05 - 23 November 2007
40
60
handbook, halfpage
handbook, halfpage
I
V
G
MSG = maximum stable gain;
G
C
CE
UM
max
= i
gain
(dB)
(pF)
C re
Fig.5
0.8
0.6
0.4
0.2
Fig.7 Gain as a function of collector current.
= 8 V; f = 1 GHz.
c
25
20
15
10
= maximum unilateral power gain;
= maximum available gain.
0
5
0
= 0; f = 1 MHz.
0
0
BFG67; BFG67/X; BFG67/XR
Feedback capacitance as a function of
collector-base voltage.
10
4
G UM
MSG
20
8
Product specification
G
30
12
max
I C (mA)
V CB (V)
MBB302
MBB304
5 of 14
16
40