BFG67,235 NXP Semiconductors, BFG67,235 Datasheet - Page 2

• Manufacturer Part Number: BFG67,235
• Description: TRANS RF NPN 8GHZ 10V SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BFG67,235

• Package / Case: TO-253-4, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 380mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 15mA, 5V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 50 mA
• Power Dissipation: 380 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
FEATURES
APPLICATIONS
Wideband applications in the GHz
range, such as satellite TV tuners and
portable RF communications
equipment.
DESCRIPTION
NPN silicon transistor in a 4-pin,
dual-emitter SOT143B plastic
package. Available with in-line emitter
pinning (BFG67) and cross emitter
pinning (BFG67/X). Version with
reverse pinning (BFG67/XR) also
available on request.
MARKING
QUICK REFERENCE DATA
BFG67 (Fig.1)
BFG67/X (Fig.1)
BFG67/XR (Fig.2)
V
I
P
C
f
G
F
C
T
SYMBOL
TYPE NUMBER
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability.
CEO
tot
re
NPN 8 GHz wideband transistors
UM
collector-emitter voltage
collector current (DC)
total power dissipation
feedback capacitance
transition frequency
maximum unilateral power
gain
noise figure
PARAMETER
CODE
%MV
V26
V3%
PINNING
handbook, 2 columns
open base
T
I
I
I
T
T
T
C
C
C
Fig.1
s
amb
s
amb
s
amb
= i
= 15 mA; V
= 15 mA; V
=
=
PIN
Rev. 05 - 23 November 2007
65 C
c
1
2
3
4
= 25 C; f = 1 GHz
= 25 C; f = 1 GHz
= 25 C; f = 2 GHz
opt
opt
= 0; V
Top view
1
4
; I
; I
Simplified outline
SOT143B.
C
C
CONDITIONS
= 5 mA; V
= 5 mA; V
CB
CE
CE
collector
base
emitter
emitter
= 8 V; f = 1 MHz
= 8 V; f = 500 MHz
= 8 V;
BFG67
MSB014
CE
CE
3
2
= 8 V;
= 8 V;
BFG67; BFG67/X; BFG67/XR
collector
emitter
base
emitter
DESCRIPTION
handbook, 2 columns
BFG67/X
0.5
8
17
1.3
2.2
Fig.2
TYP.
3
2
Top view
Simplified outline
SOT143R.
10
50
300
Product specification
MAX.
collector
emitter
base
emitter
BFG67/XR
MSB035
V
mA
mW
pF
GHz
dB
dB
dB
2 of 14
4
1
UNIT