BFG67,215 NXP Semiconductors, BFG67,215 Datasheet
BFG67,215
Specifications of BFG67,215
Related parts for BFG67,215
BFG67,215 Summary of contents
Page 1
... IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. ...
Page 2
... NXP Semiconductors NPN 8 GHz wideband transistors FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in the GHz range, such as satellite TV tuners and portable RF communications equipment. DESCRIPTION NPN silicon transistor in a 4-pin, dual-emitter SOT143B plastic package ...
Page 3
... NXP Semiconductors NPN 8 GHz wideband transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC total power dissipation tot T storage temperature range stg T junction temperature j Note 1 ...
Page 4
... NXP Semiconductors NPN 8 GHz wideband transistors CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER I collector leakage current CBO h DC current gain FE f transition frequency T C collector capacitance c C emitter capacitance e C feedback capacitance re G maximum unilateral power UM gain; note 1 F noise figure Note 1 ...
Page 5
... NXP Semiconductors NPN 8 GHz wideband transistors 120 handbook, halfpage Fig.4 DC current gain as a function of collector current. 10 handbook, halfpage T f (GHz GHz. CE amb Fig.6 Transition frequency as a function of collector current. MBB301 handbook, halfpage (mA MBB303 handbook, halfpage gain (dB (mA MSG = maximum stable gain; ...
Page 6
... NXP Semiconductors NPN 8 GHz wideband transistors 50 handbook, halfpage gain (dB MSG mA maximum unilateral power gain; UM MSG = maximum stable gain maximum available gain. max Fig.8 Gain as a function of frequency. 50 handbook, halfpage gain (dB MSG mA maximum unilateral power gain; UM MSG = maximum stable gain maximum available gain. ...
Page 7
... NXP Semiconductors NPN 8 GHz wideband transistors 4 handbook, halfpage F (dB Fig.12 Minimum noise figure as a function of frequency. BFG67 (MHz) (V) (mA) 500 8 5 Noise Parameters Gamma (opt) F min R n (dB) (mag) (ang) 0.95 0.455 33.8 0.288 MBB309 (MHz) 0 Rev November 2007 BFG67; BFG67/X; BFG67/XR ...
Page 8
... NXP Semiconductors NPN 8 GHz wideband transistors BFG67 (MHz) (V) (mA) 1000 8 5 Noise Parameters Gamma (opt) F min R n (dB) (mag) (ang) 1.3 0.375 65.9 0.304 BFG67 (MHz) (V) (mA) 2000 8 5 Noise Parameters Gamma (opt) F min R n (dB) (mag) (ang) 2.2 0.391 136.5 0.184 Average Gain Parameters ...
Page 9
... NXP Semiconductors NPN 8 GHz wideband transistors handbook, full pagewidth mA Fig.16 Common emitter input reflection coefficient (S handbook, full pagewidth 180 mA Fig.17 Common emitter forward transmission coefficient (S 1 0.5 3 GHz 0.2 0.2 0.5 1 0.2 0 120 150 40 MHz 3 GHz 150 120 90 Rev November 2007 Product specifi ...
Page 10
... NXP Semiconductors NPN 8 GHz wideband transistors handbook, full pagewidth handbook, full pagewidth mA Fig.18 Common emitter reverse transmission coefficient (S handbook, full pagewidth 180 mA Fig.19 Common emitter output reflection coefficient (S 1 0.5 0.2 0.2 0 GHz 0.2 0 120 150 40 MHz 0.5 0.4 0.3 0.2 ...
Page 11
... NXP Semiconductors NPN 8 GHz wideband transistors PACKAGE OUTLINES Plastic surface mounted package; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.48 0.88 0.1 mm 0.9 0.38 0.78 OUTLINE VERSION IEC SOT143B scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 REFERENCES ...
Page 12
... NXP Semiconductors NPN 8 GHz wideband transistors Plastic surface mounted package; reverse pinning; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.48 0.88 0.1 mm 0.9 0.38 0.78 OUTLINE VERSION IEC SOT143R scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 REFERENCES ...
Page 13
... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
Page 14
... NXP Semiconductors Revision history Table 1. Revision history Document ID Release date BFG67_X_XR_N_5 20071123 • Modifications: Page 2; Table Marking code; row 1 and 2 code changed BFG67_X_XR_4 19981002 (9397 750 04349) BFG67_SERIES_3 19950901 BFG67_SERIES_2 - BFG67_SERIES_1 - BFG67; BFG67/X; BFG67/XR Data sheet status Change notice Product data sheet - Product specifi ...