BFG67,235 NXP Semiconductors, BFG67,235 Datasheet - Page 3

• Manufacturer Part Number: BFG67,235
• Description: TRANS RF NPN 8GHZ 10V SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BFG67,235

• Package / Case: TO-253-4, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 380mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 15mA, 5V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 50 mA
• Power Dissipation: 380 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
THERMAL CHARACTERISTICS
Note
1. T
handbook, halfpage
V
V
V
I
P
T
T
R
SYMBOL
SYMBOL
C
stg
j
CBO
CEO
EBO
tot
th j-s
NPN 8 GHz wideband transistors
(mW)
P
s
s
tot
400
300
200
100
is the temperature at the soldering point of the collector pin.
is the temperature at the soldering point of the collector pin.
0
0
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature range
junction temperature
thermal resistance from junction to soldering point
Fig.3 Power derating curve.
50
PARAMETER
100
PARAMETER
150
T
MBC984 - 1
s
(
o
C)
200
Rev. 05 - 23 November 2007
open emitter
open base
open collector
T
s
65 C; see Fig.3; note 1
CONDITIONS
note 1
BFG67; BFG67/X; BFG67/XR
CONDITIONS
65
MIN.
Product specification
20
10
2.5
50
380
150
175
VALUE
MAX.
290
3 of 14
V
V
V
mA
mW
C
C
UNIT
UNIT
K/W