BLF7G27L-90P,118 NXP Semiconductors, BLF7G27L-90P,118 Datasheet - Page 9

• Manufacturer Part Number: BLF7G27L-90P,118
• Description: TRANS LDMOS SOT1121A
• Manufacturer: NXP Semiconductors

Specifications of BLF7G27L-90P,118

• Voltage - Rated: 65V
• Transistor Type: LDMOS (Dual)
• Frequency: 2.5GHz ~ 2.7GHz
• Gain: 17.5dB
• Current Rating: 18A
• Current - Test: *
• Voltage - Test: 28V
• Power - Output: 16W
• Package / Case: *
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 18A
• Drain Source Voltage (max): 65V
• Output Power (max): 16W(Typ)
• Power Gain (typ)@vds: 17.5@28VdB
• Frequency (min): 2.5GHz
• Frequency (max): 2.7GHz
• Package Type: CDFM
• Pin Count: 5
• Forward Transconductance (typ): 0.53S
• Drain Source Resistance (max): 240(Typ)@5.55Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 27.5%
• Mounting: Screw
• Mode Of Operation: IS-95
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
13. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
8
9
10
11
11.1
11.2
11.3
11.4
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 4
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 6
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 7
Contact information. . . . . . . . . . . . . . . . . . . . . . 8
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Ruggedness in class-AB operation . . . . . . . . . 3
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 7
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
BLF7G27L-90P; BLF7G27LS-90P
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]
Document identifier: BLF7G27L-90P_BLF7G27LS-90P
Power LDMOS transistor
Date of release: 2 November 2010
All rights reserved.