BLF7G27L-90P,118 NXP Semiconductors, BLF7G27L-90P,118 Datasheet - Page 4

• Manufacturer Part Number: BLF7G27L-90P,118
• Description: TRANS LDMOS SOT1121A
• Manufacturer: NXP Semiconductors

Specifications of BLF7G27L-90P,118

• Voltage - Rated: 65V
• Transistor Type: LDMOS (Dual)
• Frequency: 2.5GHz ~ 2.7GHz
• Gain: 17.5dB
• Current Rating: 18A
• Current - Test: *
• Voltage - Test: 28V
• Power - Output: 16W
• Package / Case: *
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 18A
• Drain Source Voltage (max): 65V
• Output Power (max): 16W(Typ)
• Power Gain (typ)@vds: 17.5@28VdB
• Frequency (min): 2.5GHz
• Frequency (max): 2.7GHz
• Package Type: CDFM
• Pin Count: 5
• Forward Transconductance (typ): 0.53S
• Drain Source Resistance (max): 240(Typ)@5.55Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 27.5%
• Mounting: Screw
• Mode Of Operation: IS-95
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
8. Package outline
Fig 1.
BLF7G27L-90P_BLF7G27LS-90P
Objective data sheet
Flanged LDMOST ceramic package; 2 mounting holes; 4 leads
Dimensions
inches
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
H
mm
Unit
SOT1121A
Outline
version
U
Package outline SOT1121A
A
A
(1)
max
nom
max
nom
2
min
min
0.187
0.136
4.75
3.45
A
0.155
0.145
3.94
3.68
b
0.007
0.004
0.18
0.10
IEC
c
20.02
19.61
0.788
0.772
D
19.96
19.66
0.786
0.774
D
1
1
3
JEDEC
8.89
0.35
All information provided in this document is subject to legal disclaimers.
e
0.375
0.365
BLF7G27L-90P; BLF7G27LS-90P
9.53
9.27
E
References
Rev. 1 — 2 November 2010
D
U
H
D
q
e
0.375
0.365
0
1
1
1
9.53
9.27
E
1
0.045
0.035
1.14
0.89
F
JEITA
b
scale
19.94
18.92
0.785
0.745
5
H
2
4
12.83
12.57
0.505
0.495
H
1
w
2
0.133
0.123
10 mm
3.38
3.12
p
C
0.067
0.057
Q
1.70
1.45
(2)
27.94
5
1.1
q
w
1
34.16
33.91
1.345
1.335
U
European
projection
1
B
C
p
F
A
Power LDMOS transistor
9.91
9.65
0.39
0.38
U
2
B
E
0.25
0.01
w
1
1
© NXP B.V. 2010. All rights reserved.
0.51
0.02
w
Q
2
Issue date
09-10-12
10-02-02
c
sot1121a_po
SOT1121A
E
4 of 9