BLF7G27L-90P,118 NXP Semiconductors, BLF7G27L-90P,118 Datasheet - Page 3

• Manufacturer Part Number: BLF7G27L-90P,118
• Description: TRANS LDMOS SOT1121A
• Manufacturer: NXP Semiconductors

Specifications of BLF7G27L-90P,118

• Voltage - Rated: 65V
• Transistor Type: LDMOS (Dual)
• Frequency: 2.5GHz ~ 2.7GHz
• Gain: 17.5dB
• Current Rating: 18A
• Current - Test: *
• Voltage - Test: 28V
• Power - Output: 16W
• Package / Case: *
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 18A
• Drain Source Voltage (max): 65V
• Output Power (max): 16W(Typ)
• Power Gain (typ)@vds: 17.5@28VdB
• Frequency (min): 2.5GHz
• Frequency (max): 2.7GHz
• Package Type: CDFM
• Pin Count: 5
• Forward Transconductance (typ): 0.53S
• Drain Source Resistance (max): 240(Typ)@5.55Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 27.5%
• Mounting: Screw
• Mode Of Operation: IS-95
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Test information
BLF7G27L-90P_BLF7G27LS-90P
Objective data sheet
7.1 Ruggedness in class-AB operation
Table 5.
Table 6.
T
Table 7.
Mode of operation: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic
channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth
is 1.2288 MHz; f
T
The BLF7G27L-90P and BLF7G27LS-90P are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
Symbol
R
Symbol Parameter
V
V
I
I
I
g
R
Symbol
P
G
RL
η
ACPR
DSS
DSX
GSS
j
case
DS
fs
D
(BR)DSS
GS(th)
L(AV)
th(j-c)
DS(on)
p
= 25
in
= 28 V; I
= 25
885k
°
C; per section unless otherwise specified.
drain-source breakdown voltage V
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V
°
Parameter
thermal resistance from junction to case
C; 2 sections combined unless otherwise specified; in a class-AB production test circuit.
Thermal characteristics
Characteristics
Functional test information
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio (885 kHz)
Dq
1
= 720 mA; P
All information provided in this document is subject to legal disclaimers.
= 2500 MHz; f
BLF7G27L-90P; BLF7G27LS-90P
Rev. 1 — 2 November 2010
L
2
= 80 W (CW); f = 2500 MHz.
= 2700 MHz; RF performance at V
Conditions
V
V
V
V
V
V
I
D
GS
DS
GS
GS
DS
GS
DS
GS
= 2100 mA
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
GS(th)
GS(th)
Conditions
T
D
Conditions
P
P
P
P
DS
case
D
D
= 0.6 mA
L(AV)
L(AV)
L(AV)
L(AV)
+ 3.75 V;
DS
+ 3.75 V;
= 60 mA
= 60 mA
= 28 V
= 0 V
= 80 °C; P
= 16 W
= 16 W
= 16 W
= 16 W
DS
Power LDMOS transistor
= 28 V; I
Min
65
<tbd> 1.8
-
-
-
-
-
L
= 100 W
Min Typ Max Unit
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
Typ
-
-
11.5
-
0.53
0.24
Dq
16
17.5 -
−15 -
27.5 -
−42 -
= 720 mA;
Max
-
<tbd> V
1.4
-
150
-
-
Typ
0.5
-
Unit
K/W
W
dB
dB
%
dBc
Unit
V
μA
A
nA
S
Ω
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