BLF7G27L-90P,118 NXP Semiconductors, BLF7G27L-90P,118 Datasheet - Page 5

• Manufacturer Part Number: BLF7G27L-90P,118
• Description: TRANS LDMOS SOT1121A
• Manufacturer: NXP Semiconductors

Specifications of BLF7G27L-90P,118

• Voltage - Rated: 65V
• Transistor Type: LDMOS (Dual)
• Frequency: 2.5GHz ~ 2.7GHz
• Gain: 17.5dB
• Current Rating: 18A
• Current - Test: *
• Voltage - Test: 28V
• Power - Output: 16W
• Package / Case: *
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 18A
• Drain Source Voltage (max): 65V
• Output Power (max): 16W(Typ)
• Power Gain (typ)@vds: 17.5@28VdB
• Frequency (min): 2.5GHz
• Frequency (max): 2.7GHz
• Package Type: CDFM
• Pin Count: 5
• Forward Transconductance (typ): 0.53S
• Drain Source Resistance (max): 240(Typ)@5.55Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 27.5%
• Mounting: Screw
• Mode Of Operation: IS-95
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
Fig 2.
BLF7G27L-90P_BLF7G27LS-90P
Objective data sheet
Earless flanged LDMOST ceramic package; 4 leads
Dimensions
inches
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
mm
Unit
SOT1121B
Outline
version
Package outline SOT1121B
(1)
max
nom
max
nom
min
min
0.187
0.136
4.75
3.45
A
H
A
U
0.155
0.145
3.94
3.68
2
b
0.007
0.003
0.18
0.08
IEC
c
20.02
19.61
0.788
0.772
D
1
3
19.96
19.66
0.786
0.774
D
1
JEDEC
8.89
0.35
All information provided in this document is subject to legal disclaimers.
e
0.375
0.365
BLF7G27L-90P; BLF7G27LS-90P
D
U
H
9.53
9.27
D
e
References
1
1
1
E
Rev. 1 — 2 November 2010
0.375
0.365
0
9.53
9.27
E
1
0.045
0.035
b
1.14
0.89
JEITA
F
2
4
scale
19.94
18.92
0.785
0.745
5
H
5
12.83
12.57
0.505
0.495
w
H
3
1
10 mm
0.067
0.057
D
1.70
1.45
Q
w
2
20.70
20.45
0.815
0.805
F
U
1
D
9.91
9.65
0.39
0.38
U
2
0.51
0.02
w
European
projection
2
E
0.25
0.01
Power LDMOS transistor
w
1
3
Q
© NXP B.V. 2010. All rights reserved.
c
Issue date
09-10-12
09-12-14
sot1121b_po
E
SOT1121B
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