BLF7G27L-90P,118 NXP Semiconductors, BLF7G27L-90P,118 Datasheet - Page 6

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BLF7G27L-90P,118

Manufacturer Part Number
BLF7G27L-90P,118
Description
TRANS LDMOS SOT1121A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF7G27L-90P,118

Voltage - Rated
65V
Transistor Type
LDMOS (Dual)
Frequency
2.5GHz ~ 2.7GHz
Gain
17.5dB
Current Rating
18A
Current - Test
*
Voltage - Test
28V
Power - Output
16W
Package / Case
*
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
18A
Drain Source Voltage (max)
65V
Output Power (max)
16W(Typ)
Power Gain (typ)@vds
17.5@28VdB
Frequency (min)
2.5GHz
Frequency (max)
2.7GHz
Package Type
CDFM
Pin Count
5
Forward Transconductance (typ)
0.53S
Drain Source Resistance (max)
240(Typ)@5.55Vmohm
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
27.5%
Mounting
Screw
Mode Of Operation
IS-95
Number Of Elements
2
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
NXP Semiconductors
9. Abbreviations
10. Revision history
Table 9.
BLF7G27L-90P_BLF7G27LS-90P
Objective data sheet
Document ID
BLF7G27L-90P_BLF7G27LS-90P v.1
Revision history
Table 8.
Acronym
CCDF
CW
IS-95
ESD
LDMOS
LDMOST
N-CDMA
PAR
RF
VSWR
Abbreviations
Release date
20101102
All information provided in this document is subject to legal disclaimers.
Description
Complementary Cumulative Distribution Function
Continuous Wave
Interim Standard 95
ElectroStatic Discharge
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal Oxide Semiconductor Transistor
Narrowband Code Division Multiple Access
Peak-to-Average power Ratio
Radio Frequency
Voltage Standing Wave Ratio
BLF7G27L-90P; BLF7G27LS-90P
Rev. 1 — 2 November 2010
Data sheet status
Objective data sheet
Change notice
-
Power LDMOS transistor
Supersedes
-
© NXP B.V. 2010. All rights reserved.
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