BLF7G27L-200PB NXP Semiconductors, BLF7G27L-200PB Datasheet

200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz

BLF7G27L-200PB

Manufacturer Part Number
BLF7G27L-200PB
Description
200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz
Manufacturer
NXP Semiconductors
Datasheet
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
200 W LDMOS power transistor for base station applications at frequencies from
2600 MHz to 2700 MHz.
Table 1.
Typical RF performance at T
[1]
Mode of operation
2-carrier W-CDMA
BLF7G27L-200PB
Power LDMOS transistor
Rev. 2 — 20 February 2012
Excellent ruggedness
High efficiency
Low R
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2600 MHz to 2700 MHz frequency range
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
th
Typical performance
providing excellent thermal stability
case
f
(MHz)
2620 to 2690
= 25
C in a common source class-AB production test circuit.
I
(mA)
1700
Dq
V
(V)
32
DS
P
(W)
65
L(AV)
Product data sheet
G
(dB)
16.5
p
(%)
29
D
ACPR
(dBc)
30
[1]

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BLF7G27L-200PB Summary of contents

Page 1

... BLF7G27L-200PB Power LDMOS transistor Rev. 2 — 20 February 2012 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8 0.01 % probability on CCDF; ...

Page 2

... Limiting values Parameter Conditions drain-source voltage gate-source voltage storage temperature junction temperature Thermal characteristics thermal resistance from junction to case T All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 February 2012 BLF7G27L-200PB Power LDMOS transistor Simplified outline Graphic symbol ...

Page 3

... P L(AV  D ACPR 7.1 Ruggedness in class-AB operation The BLF7G27L-200PB is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 1700 mA BLF7G27L-200PB Product data sheet Characteristics C per section, unless otherwise specified. drain-source breakdown voltage gate-source threshold voltage ...

Page 4

... MHz ( 2650 MHz ( 2700 MHz Fig 3. All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 February 2012 BLF7G27L-200PB Power LDMOS transistor = [ () 2.79  j4.86 2.61  j4.49 2.36  j4.41 drain Z L 001aaf059   ...

Page 5

... Fig 5.  $&35 0 G%F              All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 February 2012 BLF7G27L-200PB Power LDMOS transistor          1700 mA; PAR = 7 0.01  probability on the CCDF. ( 2620 MHz ( 2650 MHz ( 2690 MHz Peak-to-average power ratio as a function of peak power ...

Page 6

... S      Fig 8. DDD $&35 G%F    Fig 10. Adjacent power channel ratio (5 MHz All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 February 2012 BLF7G27L-200PB Power LDMOS transistor            1700 mA; channel spacing = 5 MHz PAR = 8 0.01  probability on the CCDF. ...

Page 7

... Fig 12. Single carrier IS-95 drain efficiency as a DDD $&  Fig 14. Single carrier IS-95 at ACPR at 1980 kHz as a All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 February 2012 BLF7G27L-200PB Power LDMOS transistor  '         1700 mA ( 2600 MHz ...

Page 8

... All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 February 2012 BLF7G27L-200PB Power LDMOS transistor C10 C12 C11 ...

Page 9

... References JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 February 2012 BLF7G27L-200PB Power LDMOS transistor (2) ...

Page 10

... Laterally Diffused Metal Oxide Semiconductor Transistor Peak-to-Average power Ratio Radio Frequency Voltage Standing Wave Ratio Wideband Code Division Multiple Access All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 February 2012 BLF7G27L-200PB Power LDMOS transistor © NXP B.V. 2012. All rights reserved ...

Page 11

... BLF7G27L-200PB_27LS-200PB v.1 BLF7G27L-200PB Product data sheet Release date Data sheet status 20120220 Product data sheet • This document now only describes the BLF7G27L-200PB product. • Table 1 on page 1: Some changes have been made. • Section 1.2 on page 1: Some changes have been made. • ...

Page 12

... All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 February 2012 BLF7G27L-200PB Power LDMOS transistor © NXP B.V. 2012. All rights reserved ...

Page 13

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 February 2012 BLF7G27L-200PB Power LDMOS transistor © NXP B.V. 2012. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF7G27L-200PB All rights reserved. Date of release: 20 February 2012 ...

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