FGH25N120FTDS Fairchild Semiconductor, FGH25N120FTDS Datasheet - Page 5

• Manufacturer Part Number: FGH25N120FTDS
• Description: IGBT 1200V 25A FIELD STOP TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH25N120FTDS

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 313W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 50A
• Gate To Emitter Voltage (max): ±25V
• Package Type: TO-3PN
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH25N120FTDS
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Capacitance Characteristics
Figure 11. SOA Characteristics
8000
6000
4000
2000
0.01
200
100
0.1
20
16
12
10
8
4
0
0
1
0
1
1
Rev. A
*Notes:
Gate Resistance
1. T
2. T
3. Single Pulse
Collector-Emitter Voltage, V
C
J
Collector-Emitter Voltage, V
= 150
= 25
4
Gate-Emitter Voltage, V
I
C
o
= 10A
o
C
10
25A
C
C
C
C
oes
res
ies
8
50A
100
DC
12
10 ms
Common Emitter
V
T
1ms
GE
C
Common Emitter
T
10
C
= 25
GE
= 0V, f = 1MHz
= 125
CE
100
[V]
o
CE
GE
[V]
C
16
µ
o
[V]
s
C
1000 3000
10
µ
s
20
30
5
Figure 10. Gate Charge Characteristics
Figure 8. Load Current vs. Frequency
Figure 12. Turn-on Characteristics vs.
140
120
100
80
60
40
20
0
10
200
100
15
12
10
Duty cycle : 50%
T
Powe Dissipation = 125W
0
9
6
3
0
C
0
0
= 100
Common Emitter
T
C
= 25
t
o
r
C
Gate Resistance
t
d(on)
o
40
10
C
Frequency [kHz]
10
V
load Current : peak of square wave
Gate Resistance, R
CC
Gate Charge, Q
1
= 600V
V
CC
80
20
= 200V
Common Emitter
V
I
T
T
C
C
C
CC
120
10
= 25A
30
= 25
= 125
g
= 600V, V
2
[nC]
G
o
C
[ Ω ]
o
C
600V
400V
160
40
GE
www.fairchildsemi.com
= 15V
10
3
200
50