FCH25N60N Fairchild Semiconductor, FCH25N60N Datasheet - Page 7
FCH25N60N
Manufacturer Part Number
FCH25N60N
Description
MOSFET N-CH 600V 25A TO-247
Manufacturer
Fairchild Semiconductor
Series
SupreMOS™r
Datasheet
1.FCH25N60N.pdf
(8 pages)
Specifications of FCH25N60N
Input Capacitance (ciss) @ Vds
3352pF @ 100V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
126 mOhm @ 12.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
25A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
74nC @ 10V
Power - Max
216W
Mounting Type
Through Hole
Package / Case
TO-247-3
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.108 Ohms
Drain-source Breakdown Voltage
600 V
Continuous Drain Current
25 A
Power Dissipation
216 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FCH25N60N
Manufacturer:
Fairchild Semiconductor
Quantity:
135
Mechanical Dimensions
TO-247-3L
Dimensions in Millimeters
FCH25N60N Rev. A2
7
www.fairchildsemi.com