FDPF10N60NZ Fairchild Semiconductor, FDPF10N60NZ Datasheet - Page 2
FDPF10N60NZ
Manufacturer Part Number
FDPF10N60NZ
Description
MOSFET N-CH 600V 10A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET-II™r
Datasheet
1.FDP10N60NZ.pdf
(10 pages)
Specifications of FDPF10N60NZ
Input Capacitance (ciss) @ Vds
1475pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
750 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Power - Max
38W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDPF10N60NZ
Manufacturer:
Fairchi/ON
Quantity:
38 000
Part Number:
FDPF10N60NZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDP10N60NZ / FDPF10N60NZ Rev. A
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
BV
I
I
V
R
g
C
C
C
Q
Q
Q
t
t
t
t
I
I
V
t
Q
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 11mH, I
3. I
4.Pulse test: Pulse width s,Duty Cycle
5. Essentially Independent of Operating Temperature Typical Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
T
FS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
SD
Device Marking
DSS
Symbol
FDPF10N60NZ
J
FDP10N60NZ
DSS
10A, di/dt 200A/s, V
AS
= 10A, V
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
= 50V, R
DD
BV
FDPF10N60NZ
FDP10N60NZ
G
DSS
= 25, Starting T
Device
Parameter
, Starting T
J
T
= 25C
C
J
= 25C
= 25
o
C unless otherwise noted
Package
TO-220F
TO-220
I
I
V
V
V
V
V
dI
V
V
V
V
f = 1MHz
V
V
V
R
D
D
DS
DS
GS
DD
GS
GS
GS
GS
DS
DS
DS
GS
G
F
= 250A, V
= 250A, Referenced to 25
/dt = 100A/s
= 25
= 600V, V
= 480V, T
= 0V, I
= ±25V, V
= 20V, I
= 25V, V
= 480V, I
= 10V
= 300V, I
= 0V, I
= V
= 10V, I
DS
Test Conditions
, I
SD
2
SD
D
Reel Size
D
D
GS
GS
D
D
= 10A
= 5A
= 10A
GS
C
= 5A
DS
= 250A
= 10A
= 10A
= 125
= 0V
= 0V, T
-
-
= 0V
= 0V
o
C
J
= 25
o
o
C
C
Tape Width
-
-
Min.
600
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
1110
0.64
300
130
0.6
14
10
23
25
50
70
50
2
6
8
-
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
Max.
1475
0.75
±10
175
110
150
110
1.4
5.0
10
15
30
10
40
60
1
50
50
-
-
-
-
-
-
-
Units
V/
nC
nC
nC
A
A
pF
pF
pF
ns
ns
ns
ns
ns
C
V
A
A
V
V
S
o
C