FDP10N60NZ Fairchild Semiconductor, FDP10N60NZ Datasheet - Page 4

• Manufacturer Part Number: FDP10N60NZ
• Description: MOSFET N-CH 600V 10A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: UniFET-II™r

Specifications of FDP10N60NZ

• Input Capacitance (ciss) @ Vds: 1475pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Power - Max: 185W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.64 Ohms
• Forward Transconductance Gfs (max / Min): 14 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 10 A
• Power Dissipation: 185 W
• Mounting Style: Through Hole
• Fall Time: 50 nS
• Gate Charge Qg: 23 nC
• Rise Time: 50 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP10N60NZ / FDPF10N60NZ Rev. A
Typical Performance Characteristics
Figure 11. Maximum Drain Current vs.
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
0.01
100
0.1
10
10
1.15
1.10
1.05
1.00
0.95
0.90
1
0.1
8
6
4
2
0
25
-100
-FDP10N60NZ
Case Temperature
vs. Temperature
Operation in This Area
is Limited by R
50
-50
V
T
1
T
C
DS
J
, Case Temperature
, Junction Temperature
, Drain-Source Voltage [V]
75
0
10
*Notes:
DS(on)
1. T
2. T
3. Single Pulse
100
C
J
50
= 150
= 25
100
[
o
o
*Notes:
o
C
C
C
1. V
2. I
[
]
o
100
125
C
D
GS
]
= 250
= 0V
1000 3000
30
100
10ms
DC
1ms


A
s

150
s
150
(Continued)
4
Figure 8. On-Resistance Variation
Figure 10. Maximum Safe Operating Area
2.75
0.25
0.01
100
2.5
2.0
1.5
1.0
0.5
0.1
10
-100
1
1
Operation in This Area
is Limited by R
vs. Temperature
-50
T
-FDPF10N60NZ
J
V
, Junction Temperature
DS
10
, Drain-Source Voltage [V]
*Notes:
DS(on)
1. T
2. T
3. Single Pulse
0
C
J
= 150
= 25
o
C
o
100
C
50
*Notes:
[
1. V
2. I
o
100
C
D
GS
]
= 5A
1000 3000
30
100
DC
www.fairchildsemi.com
1ms
10ms
= 10V

s

s
150