FDT86102LZ Fairchild Semiconductor, FDT86102LZ Datasheet - Page 4

• Manufacturer Part Number: FDT86102LZ
• Description: MOSFET N-CH 100V 6.6A SOT-223
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDT86102LZ

• Input Capacitance (ciss) @ Vds: 1490pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 6.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 28 mOhms
• Forward Transconductance Gfs (max / Min): 26 S
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 6.6 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDT86102LZ Rev. C
©2010 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
10
10
10
10
10
10
10
10
20
10
8
6
4
2
0
0.001
Figure 7.
1
-1
-2
-3
-4
-5
-6
-7
-8
-9
Figure 11. Gate Leakage Current vs
0
0
I
Figure 9.
D
V
= 6.6 A
GS
= 0 V
5
Gate to Source Voltage
3
0.01
Switching Capability
V
Gate Charge Characteristics
GS ,
t
AV
Unclamped Inductive
Q
, TIME IN AVALANCHE (ms)
10
GATE TO SOURCE VOLTAGE (V)
g
, GATE CHARGE (nC)
6
V
0.1
DD
T
15
J
V
= 50 V
= 125
DD
T
9
J
= 75 V
= 125
V
o
20
T
DD
T
C
T
J
1
J
J
= 25 V
= 25
o
= 25 °C unless otherwise noted
= 25
12
C
T
o
25
o
J
C
C
= 100
10
15
o
30
C
100
18
35
4
0.005
2000
1000
0.01
15
12
100
0.1
9
6
3
0
Figure 10.
50
10
10
25
1
0.01
1
0.1
R
Package Limited
Figure 8.
θ
f = 1 MHz
V
Current vs Case Temperature
Figure 12.
JC
GS
THIS AREA IS
LIMITED BY r
= 12
= 0 V
50
V
V
o
Maximum Continuous Drain
DS
0.1
DS
C/W
to Source Voltage
T
, DRAIN TO SOURCE VOLTAGE (V)
C
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
,
Capacitance vs Drain
CASE TEMPERATURE (
SINGLE PULSE
T
R
T
J
A
Forward Bias Safe
θ
1
DS(on)
JA
= MAX RATED
= 25
75
V
= 118
GS
1
o
= 4.5 V
C
o
C/W
100
V
GS
10
= 10 V
10
o
C )
125
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100
C
C
C
100 ms
100
1 ms
10 ms
1 s
10 s
DC
oss
rss
iss
150
μ
s
100
500