FDMC8622 Fairchild Semiconductor, FDMC8622 Datasheet

MOSFET N-CH 100V 4A POWER33

FDMC8622

Manufacturer Part Number
FDMC8622
Description
MOSFET N-CH 100V 4A POWER33
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMC8622

Input Capacitance (ciss) @ Vds
402pF @ 50V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
56 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
4A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
7.3nC @ 10V
Power - Max
2.5W
Mounting Type
*
Package / Case
*
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
56 mOhms
Forward Transconductance Gfs (max / Min)
8.9 S
Drain-source Breakdown Voltage
100 V
Continuous Drain Current
16 A
Power Dissipation
31 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2010 Fairchild Semiconductor Corporation
FDMC8622 Rev.C
FDMC8622
N-Channel Power Trench
100 V, 16 A, 56 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
DS
GS
AS
D
J
Max r
Max r
High performance trench technology for extremely low r
High power and current handling capability in a widely used
surface mount package
100% UIL Tested
Termination is Lead-free and RoHS Compliant
θJC
θJA
, T
Symbol
Device Marking
STG
FDMC8622
DS(on)
DS(on)
= 56 mΩ at V
= 90 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
GS
GS
= 10 V, I
= 6 V, I
FDMC8622
-Continuous (Silicon limited)
-Continuous
-Pulsed
MLP 3.3X3.3
Device
D
D
= 3 A
= 4 A
T
A
®
= 25 °C unless otherwise noted
MOSFET
Parameter
MLP 3.3X3.3
DS(on)
Package
1
T
T
T
T
T
General Description
This
Semiconductor‘s advanced Power Trench
been optimized for r
ruggedness.
Application
A
A
C
C
C
= 25 °C
= 25 °C
= 25 °C
DC-DC Primary Switch
= 25 °C
= 25 °C
N-Channel
Reel Size
13 ’’
D
D
D
D
(Note 1a)
(Note 1a)
(Note 1)
(Note 3)
MOSFET
7
8
5
6
DS(on)
Tape Width
, switching performance and
is
12 mm
-55 to +150
produced using Fairchild
Ratings
100
±20
2.5
4.0
50
16
16
30
37
31
4
®
process that has
www.fairchildsemi.com
4
1
3
2
January 2011
3000 units
Quantity
G
S
S
S
Units
°C/W
mJ
°C
W
V
V
A

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FDMC8622 Summary of contents

Page 1

... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMC8622 FDMC8622 ©2010 Fairchild Semiconductor Corporation FDMC8622 Rev.C ® MOSFET General Description = 4 A This N-Channel D Semiconductor‘s advanced Power Trench = been optimized for r ruggedness ...

Page 2

... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° 3. Starting N-ch 3 ©2010 Fairchild Semiconductor Corporation FDMC8622 Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 °C I ...

Page 3

... JUNCTION TEMPERATURE ( , T J Figure 3. Normalized On- Resistance vs Junction Temperature 30 μ PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDMC8622 Rev 25°C unless otherwise noted 6 μ 0.5 0.4 0.3 0.2 0.1 0 100 125 150 ...

Page 4

... Switching Capability 40 10 THIS AREA IS 1 LIMITED BY r DS(on) SINGLE PULSE T = MAX RATED 0 125 C/W θ 0.01 0.005 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDMC8622 Rev 25°C unless otherwise noted J 1000 = 100 100 ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.0001 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDMC8622 Rev 25°C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION (sec NOTES: DUTY FACTOR ...

Page 6

... Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDMC8622 Rev.C 6 www.fairchildsemi.com ...

Page 7

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDMC8622 Rev.C ® PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...

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