FQD2P40TM Fairchild Semiconductor, FQD2P40TM Datasheet

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FQD2P40TM

Manufacturer Part Number
FQD2P40TM
Description
MOSFET P-CH 400V 1.56A DPAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQD2P40TM

Input Capacitance (ciss) @ Vds
350pF @ 25V
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6.5 Ohm @ 780mA, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
1.56A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 10V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
2008 Fairchild Semiconductor Internationa
FQD2P40 / FQU2P40
400V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for electronic lamp ballasts based on the
complementary half bridge topology.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
resistance,
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
S
FQD Series
D-PAK
provide
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
superior
= 25°C) *
Parameter
= 25°C)
Parameter
G
T
D
C
C
C
switching
= 25°C unless otherwise noted
S
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• -1.56A, -400V, R
• Low gate charge ( typical 10 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant
FQU Series
I-PAK
FQD2P40 / FQU2P40
Typ
--
--
--
DS(on)
-55 to +150
-1.56
-0.98
-6.24
-1.56
-400
120
-4.5
300
3.8
2.5
0.3
= 6.5
38
30
G
! ! ! !
! ! ! !
@V
Max
3.29
110
50
October 2008
GS
QFET
= -10 V
▶ ▶ ▶ ▶
▶ ▶ ▶ ▶
! ! ! !
! ! ! !
D
S
! ! ! !
! ! ! !
● ●
● ●
● ●
● ●
● ●
● ●
▲ ▲ ▲ ▲
▲ ▲ ▲ ▲
Rev. A3, October 2008
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
®

Related parts for FQD2P40TM

FQD2P40TM Summary of contents

Page 1

... JC R Thermal Resistance, Junction-to-Ambient * JA R Thermal Resistance, Junction-to-Ambient JA * When mounted on the minimum pad size recommended (PCB Mount) 2008 Fairchild Semiconductor Internationa Features • -1.56A, -400V, R • Low gate charge ( typical 10 nC) • Low Crss ( typical 6.5 pF) • Fast switching superior switching • ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 86mH -1.56A -50V -2.0A, di/dt 200A Starting DSS, 4. Pulse Test : Pulse width 300 s, Duty cycle 5. Essentially independent of operating temperature ©2008 Fairchild Semiconductor International T = 25°C unless otherwise noted C Test Conditions -250 -250 A, Referenced to 25° -400 -320 125° ...

Page 3

... Drain Current [A] D Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 600 500 400 300 200 100 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2008 Fairchild Semiconductor International 0 10 ※ Notes : 1. 250 μ s Pulse Test = 25 ℃ Figure 2. Transfer Characteristics 0 10 ※ Note : T = 25℃ J ...

Page 4

... Notes : 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2008 Fairchild Semiconductor International (Continued) 2.5 2.0 1.5 1.0 ※ Notes : 0 -250 μ 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 1.8 1.5 100 1 0.9 0.6 0.3 0.0 2 ...

Page 5

... Resistive Switching Test Circuit & Waveforms -10V -10V Unclamped Inductive Switching Test Circuit & Waveforms -10V -10V ©2008 Fairchild Semiconductor International Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT -10V -10V DUT DUT DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2008 Fairchild Semiconductor International + + DUT DUT Driver Driver Compliment of DUT Compliment of DUT (N-Channel) (N-Channel) • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Mechanical Dimensions ©2008 Fairchild Semiconductor International D - PAK Dimensions in Millimeters Rev. A3, October 2008 ...

Page 8

... Mechanical Dimensions ©2008 Fairchild Semiconductor International I - PAK Dimensions in Millimeters Rev. A3, October 2008 ...

Page 9

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

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