FDMC7692S Fairchild Semiconductor, FDMC7692S Datasheet

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FDMC7692S

Manufacturer Part Number
FDMC7692S
Description
MOSFET N-CH 30V 8-MLP
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®, SyncFET™r
Datasheet

Specifications of FDMC7692S

Input Capacitance (ciss) @ Vds
1385pF @ 15V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9.3 mOhm @ 12.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
12.5A
Vgs(th) (max) @ Id
3V @ 1mA
Gate Charge (qg) @ Vgs
23nC @ 10V
Power - Max
2.3W
Mounting Type
Surface Mount
Package / Case
8-MLP, Power33
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMC7692S
Manufacturer:
FAIRCHILD
Quantity:
2 766
Part Number:
FDMC7692S
Manufacturer:
FAIRCHILD
Quantity:
8 000
Part Number:
FDMC7692S
Manufacturer:
FAIRCHILD/ON
Quantity:
20 000
©2010 Fairchild Semiconductor Corporation
FDMC7692S Rev.C3
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
FDMC7692S
N-Channel Power Trench
30 V, 12.5 A, 9.3 m
Features
D
J
DS
GS
AS
D
, T
JC
JA
Max r
Max r
High performance technology for extremely low r
Termination is Lead-free and RoHS Compliant
Symbol
Device Marking
STG
FDMC7692S
DS(on)
DS(on)
= 9.3 m at V
= 13.6 m at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Sinlge Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Top
GS
GS
FDMC7692S
= 10 V, I
-Pulsed
-Continuous
= 4.5 V, I
MLP 3.3x3.3
Device
D
Pin 1
D
= 12.5 A
= 10.4 A
T
A
®
= 25 °C unless otherwise noted
S
Parameter
SyncFET
DS(on)
S
S
MLP 3.3X3.3
G
Package
Bottom
1
T
T
T
D
TM
C
A
A
General Description
This FDMC7692S is produced using Fairchild Semiconductor’s
advanced Power Trench
tailored to minimize the on-state resistance. This device is well
suited for Power Management and load switching applications
common in Notebook Computers and Portable Battery packs.
Applications
D
= 25 °C
= 25 °C
T
= 25 °C
DC - DC Buck Converters
Notebook DC - DC application
C
D
= 25 °C
D
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 3)
D
D
D
D
®
5
6
7
8
process that has been especially
Tape Width
12 mm
-55 to +150
Ratings
12.5
±20
2.3
4.7
30
18
45
21
27
53
September 2010
www.fairchildsemi.com
3000 units
Quantity
4
3
2
1
Units
°C/W
°C/W
G
S
S
S
mJ
°C
W
V
V
A

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FDMC7692S Summary of contents

Page 1

... Device FDMC7692S FDMC7692S ©2010 Fairchild Semiconductor Corporation FDMC7692S Rev.C3 ® TM SyncFET General Description This FDMC7692S is produced using Fairchild Semiconductor’ advanced Power Trench = 10 tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications DS(on) common in Notebook Computers and Portable Battery packs. ...

Page 2

... Reverse Recovery Charge rr Notes determined with the device mounted on a 1in JA the user's board design. 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. ° based on starting 0.3 mH ©2010 Fairchild Semiconductor Corporation FDMC7692S Rev. °C unless otherwise noted J Test Conditions mA mA, referenced to 25 ° ...

Page 3

... Figure 3. Normalized On- Resistance vs Junction Temperature 45 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 125 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDMC7692S Rev. °C unless otherwise noted 4 3 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0.6 0.8 1 100 125 150 ...

Page 4

... GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics 125 J 1 0.001 0.01 0 TIME IN AVALANCHE (ms) AV Figure 9. Unclamped Inductive Switching Capability 1000 100 Figure 11. Single Pulse Maximum Power Dissipation ©2010 Fairchild Semiconductor Corporation FDMC7692S Rev. °C unless otherwise noted J 3000 1000 100 ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1E-3 1E Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDMC7692S Rev. °C unless otherwise noted J SINGLE PULSE 125 C RECTANGULAR PULSE DURATION (sec NOTES: DUTY FACTOR PEAK T ...

Page 6

... Typical Characteristics SyncFET Schottky body diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 13 shows the reverses recovery characteristic of the FDMC7692S 100 TIME (ns) Figure 13 ...

Page 7

... Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDMC7692S Rev.C3 7 www.fairchildsemi.com ...

Page 8

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDMC7692S Rev.C3 Power-SPM™ ® ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...

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