FDN8601 Fairchild Semiconductor, FDN8601 Datasheet - Page 2

• Manufacturer Part Number: FDN8601
• Description: MOSFET N-CH 100V 2.7A 3SSOT
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDN8601

• Input Capacitance (ciss) @ Vds: 210pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 109 mOhm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 10V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: SOT-3
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 85.4 mOhms
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 1.5 W
• Mounting Style: SMD/SMT
• Fall Time: 3.4 ns
• Gate Charge Qg: 3 nC
• Rise Time: 1.3 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDN8601 Rev. C
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. R
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.
3. Starting T
BV
'BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
'V
DSS
GSS
d(on)
r
d(off)
f
rr
DS(on)
FS
GS(th)
SD
R
iss
oss
rss
g
'T
'T
g
g
gs
gd
rr
Symbol
TJA
TJC
DSS
GS(th)
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R
J
= 25
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
°
C; N-ch: L = 3 mH, I
(Note 2)
TCA
AS
Parameter
= 3 A, V
is determined by the user's board design.
a)
DD
80 °C/W when mounted on a
1 in
= 100 V, V
T
2
J
pad of 2 oz copper
= 25 °C unless otherwise noted
GS
= 10 V.
V
V
V
V
V
f = 1 MHz
V
I
V
V
V
V
V
I
I
I
V
V
D
F
D
D
DD
GS
GS
GS
GS
GS
GS
GS
DS
DS
GS
DS
GS
= 1.5 A, di/dt = 100 A/Ps
= 250 PA, referenced to 25 °C
= 250 PA, V
= 250 PA, referenced to 25 °C
= 50 V, V
= 50 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 5 V
= 10 V, I
= 10 V, I
= 0 V, I
= 80 V, V
= V
= 10 V, I
= 6 V, I
= ±20 V, V
2
DS
Test Conditions
, I
D
S
D
D
D
D
D
= 1.5 A
= 1.2 A
GS
GEN
GS
= 250 PA
GS
= 1.5 A, T
= 1.5 A,
= 1.5 A
= 1.5 A
DS
= 0 V,
= 0 V
= 0 V
= 0 V
= 6 :
V
I
D
DD
= 1.5 A
= 50 V,
J
= 125 °C
(Note 2)
b)
180 °C/W when mounted on a
minimum pad.
Min
100
2.0
0.81
156
85.4
2.7
1.0
Typ
117
143
47
4.3
1.3
7.8
3.4
1.8
0.9
0.8
29
15
3.0
68
-8
3
8
±100
Max
210
1.3
109
175
183
65
46
27
4.0
10
10
16
10
www.fairchildsemi.com
5
3
5
1
mV/°C
mV/°C
Units
m:
nC
pF
pF
pF
PA
nA
nC
nC
nC
nC
ns
:
ns
ns
ns
ns
V
V
V
S