FDD850N10L Fairchild Semiconductor, FDD850N10L Datasheet - Page 4

• Manufacturer Part Number: FDD850N10L
• Description: MOSFET N-CH 100V 15.7A DPAK-3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD850N10L

• Input Capacitance (ciss) @ Vds: 1465pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 75 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 15.7A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 28.9nC @ 10V
• Power - Max: 50W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 64 mOhms
• Forward Transconductance Gfs (max / Min): 31 S
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 15.7 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDD850N10L Rev. A5
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
1.15
1.10
1.05
1.00
0.95
0.90
0.01
100
0.1
10
-100
1
0.1
Operation in This Area
is Limited by R
vs. Temperature
vs. Case Temperature
-50
T
V
J
, Junction Temperature
*Notes:
DS
1. T
2. T
3. Single Pulse
, Drain-Source Voltage [V]
0.01
1
0.1
0
C
J
4
1
10
= 175
= 25
DS(on)
0.5
0.05
0.2
0.02
0.01
-5
0.1
Single pulse
o
C
o
50
C
Figure 11. Transient Thermal Response Curve
10
100
10
*Notes:
1. V
2. I
[
-4
o
100
100ms
10ms
C
DC
1ms
D
150
GS
]
= 250
μ
s
= 0V
Rectangular Pulse Duration [sec]
100 200
μ
A
200
(Continued)
10
-3
4
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Figure 8. On-Resistance Variation
18
15
12
10
Figure 10. Maximum Drain Current
9
6
3
0
-100
25
-2
R
θ
*Notes:
JC
1. Z
2. Duty Factor, D= t
3. T
P
= 3.0
DM
50
-50
θ
JM
JC
T
T
o
J
C
- T
(t) = 3.0
vs. Temperature
C/W
, Junction Temperature
, Case Temperature
10
C
= P
t
75
-1
1
0
t
2
o
DM
C/W Max.
* Z
1
100
θ
/t
V
JC
50
2
GS
(t)
= 5V
V
1
GS
125
100
[
= 10V
o
C
*Notes:
]
[
1. V
2. I
o
C
150
D
150
]
GS
= 12A
= 10V
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175
200