FDMS7698 Fairchild Semiconductor, FDMS7698 Datasheet

MOSFET N-CH 30V 16A LL POWER56

FDMS7698

Manufacturer Part Number
FDMS7698
Description
MOSFET N-CH 30V 16A LL POWER56
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMS7698

Input Capacitance (ciss) @ Vds
1605pF @ 15V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
10 mOhm @ 13.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
13.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
24nC @ 10V
Power - Max
2.5W
Mounting Type
*
Package / Case
*
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
13.5 A
Forward Transconductance Gfs (max / Min)
53 S
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
16 A
Power Dissipation
29 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS7698
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDMS7698
0
Company:
Part Number:
FDMS7698
Quantity:
50
Company:
Part Number:
FDMS7698
Quantity:
500
©2010 Fairchild Semiconductor Corporation
FDMS7698 Rev.C
FDMS7698
N-Channel PowerTrench
30 V, 16 A, 10 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
J
DS
GS
AS
D
θJC
θJA
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
Next
engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
, T
Symbol
Device Marking
STG
FDMS7698
DS(on)
DS(on)
generation
= 10 mΩ at V
= 15 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Top
enhanced
GS
GS
Power 56
= 10 V, I
= 4.5 V, I
FDMS7698
-Continuous
-Continuous (Silicon limited)
-Pulsed
Device
body
D
D
= 13.5 A
D
= 11.0 A
diode
D
T
®
A
D
= 25 °C unless otherwise noted
MOSFET
D
Parameter
technology,
Bottom
DS(on)
Power 56
Package
S
S
1
S
T
T
T
T
T
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low r
diode reverse recovery performance.
Applications
C
A
Pin 1
C
C
A
G
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
IMVP Vcore Switching for Notebook
VRM Vcore Switching for Desktop and server
OringFET / Load Switching
DC-DC Conversion
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
D
D
D
D
(Note 4)
(Note 3)
5
6
7
8
DS(on)
Tape Width
, fast switching speed and body
12 mm
-55 to +150
Ratings
13.5
±20
2.5
4.4
30
16
44
50
29
29
50
September 2010
www.fairchildsemi.com
4
3
2
1
3000 units
Quantity
G
S
S
S
Units
°C/W
mJ
°C
W
V
A
V

Related parts for FDMS7698

FDMS7698 Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMS7698 FDMS7698 ©2010 Fairchild Semiconductor Corporation FDMS7698 Rev.C ® MOSFET General Description = 13.5 A This N-Channel MOSFET has been designed specifically to D improve the overall efficiency and to minimize switch node = 11 ...

Page 2

... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° based on starting 0.3 mH N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. ©2010 Fairchild Semiconductor Corporation FDMS7698 Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μ ...

Page 3

... JUNCTION TEMPERATURE ( Figure 3. Normalized On- Resistance vs Junction Temperature 50 μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDMS7698 Rev °C unless otherwise noted 3 μ s 1.5 2.0 2 100 125 150 - ...

Page 4

... THIS AREA IS 1 LIMITED BY r DS(on) SINGLE PULSE 0 MAX RATED 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDMS7698 Rev °C unless otherwise noted J 2000 1000 100 100 125 1000 ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDMS7698 Rev °C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION (sec NOTES: DUTY FACTOR ...

Page 6

... Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDMS7698 Rev.C 6 www.fairchildsemi.com ...

Page 7

... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDMS7698 Rev.C F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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