A2F200M3F-1FGG256 Actel, A2F200M3F-1FGG256 Datasheet - Page 11

FPGA - Field Programmable Gate Array 200K System Gates SmartFusion

A2F200M3F-1FGG256

Manufacturer Part Number
A2F200M3F-1FGG256
Description
FPGA - Field Programmable Gate Array 200K System Gates SmartFusion
Manufacturer
Actel
Datasheet

Specifications of A2F200M3F-1FGG256

Processor Series
A2F200
Core
ARM Cortex M3
Number Of Logic Blocks
8
Maximum Operating Frequency
120 MHz
Number Of Programmable I/os
117
Data Ram Size
4608 bit
Delay Time
200 ns
Supply Voltage (max)
3.6 V
Supply Current
3 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
0 C
3rd Party Development Tools
MDK-ARM, RL-ARM, ULINK2
Development Tools By Supplier
A2F-Eval-Kit, A2F-Dev-Kit, FlashPro 3, FlashPro Lite, Silicon-Explorer II, Silicon-Sculptor 3, SI-EX-TCA
Mounting Style
SMD/SMT
Supply Voltage (min)
1.425 V
Number Of Gates
200000
Package / Case
FPBGA-256
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
A2F200M3F-1FGG256
Manufacturer:
ACT
Quantity:
36
Part Number:
A2F200M3F-1FGG256
Manufacturer:
Microsemi SoC
Quantity:
10 000
Part Number:
A2F200M3F-1FGG256I
Manufacturer:
Microsemi SoC
Quantity:
10 000
SmartFusion Intelligent Mixed Signal FPGAs
brownout detection devices from the PCB design. Flash-based SmartFusion devices simplify total
system design and reduce cost and design risk, while increasing system reliability.
Immunity to Firm Errors
Firm errors occur most commonly when high-energy neutrons, generated in the atmosphere, strike a
configuration cell of an SRAM FPGA. The energy of the collision can change the state of the
configuration cell and thus change the logic, routing, or I/O configuration behavior in an unpredictable
way.
Another source of radiation-induced firm errors is alpha particles. For alpha radiation to cause a soft or
firm error, its source must be in very close proximity to the affected circuit. The alpha source must be in
the package molding compound or in the die itself. While low-alpha molding compounds are being used
increasingly, this helps reduce but does not entirely eliminate alpha-induced firm errors.
Firm errors are impossible to prevent in SRAM FPGAs. The consequence of this type of error can be a
complete system failure. Firm errors do not occur in SmartFusion flash-based FPGAs. Once it is
programmed, the flash cell configuration element of SmartFusion FPGAs cannot be altered by high
energy neutrons and is therefore immune to errors from them. Recoverable (or soft) errors occur in the
user data SRAMs of all FPGA devices. These can easily be mitigated by using error detection and
correction (EDAC) circuitry built into the FPGA fabric.
R e v i s i o n 6
1 -3

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