FDC658AP Fairchild Semiconductor, FDC658AP Datasheet
FDC658AP
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FDC658AP Summary of contents
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... Thermal Resistance, Junction-to-Ambient θJA R Thermal Resistance, Junction-to-Case θJC Package Marking and Ordering Information Device Marking Device .58A FDC658AP ©2006 Fairchild Semiconductor Corporation FDC658AP Rev. B (W) Features Max r DS(on) Max r DS(on) Low Gate Charge High performance trench technology for extremely low r DS(on) RoHS Compliant ...
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... R is guaranteed by design while R θ C/W when mounted Scale letter size paper 2: Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% FDC658AP Rev 25°C unless otherwise noted J Test Conditions I = -250µ -250µA, D Referenced to 25° ...
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... GS 1.4 1.2 1 0.8 0.6 -50 - JUNCTION TEMPERATURE ( J Figure 3. Normalized On-Resistance vs Junction Temperature - GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDC658AP Rev. B (W) 2 1.8 -4.0V 1.6 1.4 -3.5V 1.2 -3. Figure 2. 0.22 0.18 0.14 0.1 T 0.06 0.02 75 100 125 150 Figure ...
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... SINGLE PULSE 0.001 0.00001 0.0001 Figure 11. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDC658AP Rev. B (W) 600 V = -5V DS -10V 450 -15V 300 150 Figure 8 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...