TP2510N8-G Supertex, TP2510N8-G Datasheet - Page 4

• Manufacturer Part Number: TP2510N8-G
• Description: MOSFET Small Signal 100V 3.5Ohm
• Manufacturer: Supertex
• Type: Power MOSFETr

Specifications of TP2510N8-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 3.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.48 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 3.5Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 480mA
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-89
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
200
150
100
1.1
1.0
0.9
50
-5
-4
-3
-2
-1
0
0
0
-50
0
0
Capacitance vs. Drain-to-Source Voltage
BV
f = 1MHz
DSS
-2
Transfer Characteristics
-10
0
Variation with T emperature
V
V
-4
GS
DS
T
(volts)
j
-20
50
(volts)
(°C)
●
-6
1235 Bordeaux Drive, Sunnyvale, CA 94089
100
-30
-8
(cont.)
C
C
RSS
ISS
150
-10
-40
4
-10
1.4
1.2
1.0
0.8
0.6
0.4
10
-8
-6
-4
-2
8
6
4
2
0
0
-50
0
0
V
●
(th)
Tel: [phone]
Gate Drive Dynamic Characteristics
On-Resistance vs. Drain Current
and R
R
-0.8
DS (ON)
V
71 pF
0
GS
DS
Q
G
I
= -5V
Variation with Temperature
V
D
@ -10V, -0.75A
(nanocoulombs)
-1.6
DS
(amperes)
T
= -10V
142 pF
j
1.0
50
(°C)
●
V
-2.4
www.supertex.com
(th)
V
V
@ -1mA
DS
GS
100
= -40V
= -10V
-3.2
-4.0
150
2.0
2.0
1.6
1.2
0.8
0.4
0
TP2510