TP2510N8-G Supertex, TP2510N8-G Datasheet

TP2510N8-G

Manufacturer Part Number

TP2510N8-G

Description

MOSFET Small Signal 100V 3.5Ohm

Manufacturer

Supertex

Type

Power MOSFETr

Datasheet

1.TP2510N8-G.pdf (5 pages)

Specifications of TP2510N8-G

Minimum Operating Temperature

- 55 C

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

3.5 Ohm @ 10 V

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

0.48 A

Power Dissipation

1600 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

SOT-89

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

3.5Ohm

Drain-source On-volt

100V

Gate-source Voltage (max)

±20V

Drain Current (max)

480mA

Output Power (max)

Not RequiredW

Frequency (max)

Not RequiredMHz

Noise Figure

Not RequireddB

Power Gain

Not RequireddB

Drain Efficiency

Not Required%

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

3 +Tab

Package Type

SOT-89

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

TP2510N8-G

Manufacturer:

MICROCHIP

Quantity:

12 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

TP2510N8-G

Current page: 1 of 5
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Features

►

Applications

►

-G indicates package is RoHS compliant (‘Green’)

* MIL visual screening available.

Absolute Maximum Ratings

Absolute Maximum Ratings are those values beyond which damage to the device may

occur. Functional operation under these conditions is not implied. Continuous operation

of the device at the absolute rating level may affect device reliability. All voltages are

referenced to device ground.

Ordering Information

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

Soldering temperature*

Distance of 1.6 mm from case for 10 seconds.

TP2510

Device

Low threshold (-2.4V max.)

High input impedance

Low input capacitance (125pF max.)

Fast switching speeds

Low on-resistance

Free from secondary breakdown

Low input and output leakage

Logic level interfaces - ideal for TTL and CMOS

Solid state relays

Battery operated systems

Photo voltaic drives

Analog switches

General purpose line drivers

Telecom switches

TO-243AA (SOT-89)

TP2510N8-G

Package Options

●

1235 Bordeaux Drive, Sunnyvale, CA 94089

P-Channel Enhancement Mode

Vertical DMOS FETs

TP2510ND

-55°C to +150°C

Die*

300°C

Value

±20V

DGS

DSS

General Description

This low threshold enhancement-mode (normally-off) tran-

sistor utilizes a vertical DMOS structure and Supertex’s well-

proven silicon-gate manufacturing process. This combination

produces a device with the power handling capabilities of

bipolar transistors and with the high input impedance and

positive temperature coefﬁcient inherent in MOS devices.

Characteristic of all MOS structures, this device is free

from thermal runaway and thermally-induced secondary

breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide

range of switching and amplifying applications where very

low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching

speeds are desired.

DSS

Pin Conﬁguration

Product Marking

Package may or may not include the following marks: Si or

-100

(V)

/BV

DGS

●

TP5AW

Tel: 408-222-8888

TO-243AA (SOT-89) (N8)

3.5

DS(ON)

(Ω)

DRAIN

W = Code for Week Sealed

GATE

●

www.supertex.com

= “Green” Packaging

DRAIN

(max)

-2.4

GS(TH)

(V)

SOURCE

TP2510

(min)

-1.5

D(ON)

(A)

Related parts for TP2510N8-G

TP2510N8-G Summary of contents

Page 1

... General purpose line drivers ► Telecom switches Ordering Information Package Options Device TO-243AA (SOT-89) TP2510 TP2510N8-G -G indicates package is RoHS compliant (‘Green’) * MIL visual screening available. Absolute Maximum Ratings Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating and storage temperature ...

Page 2

... -25V 1.0 MHz -25V -1.0A 25Ω GEN - PULSE GENERATOR R GEN INPUT ● Tel: 408-222-8888 ● www.supertex.com TP2510 I † DRM (A) -2.5 = -2.0mA D = -1.0mA D = -1.0mA Max Rating DS = 125° -25V DS = -25V DS = -250mA D = -750mA D = -750mA D = -750mA D = -1. -1.0A SD D.U.T. Output ...

Page 3

... Bordeaux Drive, Sunnyvale, CA 94089 3 Saturation Characteristics - -10V GS -2 -8V -6V -1 -4V - (volts) DS Power Dissipation vs. Ambient Temperature 2.0 TO-243AA 1 100 125 T (°C) A Thermal Response Characteristics 1.0 0.8 0.6 0.4 TO-243AA T = 25° 0.001 0.01 0 (seconds) p ● Tel: 408-222-8888 ● www.supertex.com TP2510 -10 150 10 ...

Page 4

... I (amperes and R Variation with Temperature (th -10V, -0.75A DS (ON) 1.2 1.0 0 -1mA (th) 0.6 0.4 - 100 T (°C) j Gate Drive Dynamic Characteristics -10 142 -10V -40V 1 (nanocoulombs) G ● Tel: 408-222-8888 ● www.supertex.com TP2510 -4.0 2.0 1.6 1.2 0.8 0.4 0 150 2.0 ...

Page 5

... Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship ...

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