VN3205N8 Supertex, VN3205N8 Datasheet
VN3205N8
Manufacturer Part Number
VN3205N8
Description
Manufacturer
Supertex
Datasheets
1.VN3205.pdf
(8 pages)
2.VN3205N8.pdf
(4 pages)
3.VN3205N8.pdf
(4 pages)
4.VN3205N8.pdf
(4 pages)
Specifications of VN3205N8
Case
SOT-89
Date_code
06+
Absolute Maximum Ratings
Features
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Applications
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-G indicates package is RoHS compliant (‘Green’)
* MIL visual screening available.
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
Ordering Information
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature
VN3205
Device
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Motor controls
Converters
Amplifi ers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
ISS
VN3205N3-G
and fast switching speeds
TO-92
*
VN3205P-G
14-Lead
PDIP
N-Channel Enhancement-Mode
Vertical DMOS FETs
Package Options
-55°C to +150°C
VN3205N8-G
TO-243AA
(SOT-89)
+300°C
Value
BV
BV
±20V
DGS
DSS
General Description
This enhancement-mode (normally-off) transistor utilizes a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device with
the power handling capabilities of bipolar transistors and with
the high input impedance and positive temperature coeffi cient
inherent in MOS devices. Characteristic of all MOS structures,
this device is free from thermal runaway and thermally induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Pin Confi gurations
VN3205ND
Die*
DRAIN
TO-92 (N3)
SOURCE
D4
BV
G4
GATE
DSS
14-Lead PDIP (P)
S4
50
(V)
/BV
N/C
D1
DGS
G1
S3
S1
G3
TO-243AA (SOT-89) (N8)
D3
N/C
S2
R
max
DS(ON)
0.3
DRAIN
(Ω)
G2
D2
GATE
VN3205
DRAIN
V
SOURCE
max
2.4
GS(th)
(V)
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