TP2510N8-G Supertex, TP2510N8-G Datasheet - Page 3

• Manufacturer Part Number: TP2510N8-G
• Description: MOSFET Small Signal 100V 3.5Ohm
• Manufacturer: Supertex
• Type: Power MOSFETr

Specifications of TP2510N8-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 3.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.48 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 3.5Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 480mA
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-89
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
-0.01
-1.0
-0.1
-10
0.5
0.4
0.3
0.2
0.1
-5
-4
-3
-2
-1
0
0
-0.1
0
0
TO-243AA (DC)
Maximum Rated Safe Operating Area
TO-243AA(pulsed)
Transconductance vs. Drain Current
V
DS
-0.5
-10
T
T
= -25V
A
A
Output Characteristics
= 125°C
= 25°C
T
A
-1.0
T
= 25°C
I
D
A
-1.0
V
-20
= -55°C
V
(amperes)
DS
DS
●
(volts)
(volts)
1235 Bordeaux Drive, Sunnyvale, CA 94089
-1.5
-30
V
GS
-10
= -10V
-2.0
-40
-4V
-3V
-8V
-6V
-100
-2.5
-50
3
2.0
1.0
1.0
0.8
0.6
0.4
0.2
●
-5
-4
-3
-2
-1
0
0
0
0.001
Power Dissipation vs. Ambient Temperature
Tel: [phone]
0
0
TO-243AA
Thermal Response Characteristics
25
-2
Saturation Characteristics
0.01
50
t
V
p
-4
DS
T
(seconds)
●
A
0.1
75
(volts)
(°C)
www.supertex.com
-6
100
TO-243AA
T
P
V
A
GS
D
= 25°C
= 1.6W
= -10V
1
-8
125
-8V
-6V
-4V
-3V
TP2510
150
-10
10