SUD50N03-06AP-E3 Vishay, SUD50N03-06AP-E3 Datasheet - Page 3

• Manufacturer Part Number: SUD50N03-06AP-E3
• Description: MOSFET Power 30V 90A 83W
• Manufacturer: Vishay

Specifications of SUD50N03-06AP-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0057 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 10000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Continuous Drain Current Id: 90A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 7.8mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1.2V
• Power Dissipation Pd: 10W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 73540
S–52237—Rev. A, 24-Oct-05
0.015
0.012
0.009
0.006
0.003
0.000
100
80
60
40
20
10
0
8
6
4
2
0
0.0
0
0
On-Resistance vs. Drain Current
0.5
20
13
V
DS
Output Characteristics
– Drain-to-Source Voltage (V)
V
I
1.0
D
V
DS
V
GS
– Drain Current (A)
Gate Charge
GS
40
= 15 V
26
= 4.5 V
= 10 V thru 4 V
Q
g
1.5
(nC)
V
GS
V
60
39
DS
= 10 V
2.0
= 24 V
3 V
80
52
2.5
_
100
3.0
65
New Product
5000
4000
3000
2000
1000
1.9
1.7
1.5
1.3
1.1
0.9
0.7
20
16
12
8
4
0
0
–50
0.0
0
On-Resistance vs. Junction Temperature
I
C
D
–25
rss
0.5
= 20 A
V
V
5
DS
GS
0
1.0
Transfer Characteristics
T
T
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
C
J
SUD50N03-06AP
– Junction Temperature
= 125_C
25
T
1.5
C
Capacitance
T
C
10
= –55_C
V
Vishay Siliconix
= 25_C
GS
50
C
2.0
C
= 4.5 V
iss
oss
75
15
2.5
100
3.0
www.vishay.com
125
V
20
GS
= 10 V
3.5
150
175
4.0
25
3