SUD50N03-06AP-E3 Vishay, SUD50N03-06AP-E3 Datasheet - Page 2

• Manufacturer Part Number: SUD50N03-06AP-E3
• Description: MOSFET Power 30V 90A 83W
• Manufacturer: Vishay

Specifications of SUD50N03-06AP-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0057 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 10000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Continuous Drain Current Id: 90A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 7.8mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1.2V
• Power Dissipation Pd: 10W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Notes
a.
b.
c.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SUD50N03-06AP
Vishay Siliconix
Static
Drain-Source Breakdown Voltage
V
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
DS
GS(th)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
Calculated based on maximum junction temperature. Package limitation current is 50 A.
Temperature Coefficient
Temperature Coefficient
b
Parameter
a
a
a
a
a
_
DV
Symbol
DV
V
r
r
GS(th)
I
DS(on)
DS(on)
t
t
t
t
I
C
I
I
C
V
GS(th)
D(on)
C
Q
Q
d(on)
d(on)
V
d(off)
d(off)
I
GSS
DSS
Q
g
Q
Q
R
DS
I
SM
t
t
t
DS
oss
t
t
t
t
SD
iss
rss
gd
S
rr
a
b
fs
gs
r
f
r
f
rr
g
g
/T
/T
J
J
New Product
I
I
F
V
V
I
I
V
V
D
D
= 6.7 A, di/dt = 100 A/ms, T
DS
DS
DS
DS
^ 25 A, V
^ 30 A, V
6 7 A di/dt
= 15 V, V
= 15 V, V
V
= 30 V, V
= 15 V, V
V
V
V
V
V
V
V
V
V
V
V
DS
DS
DS
Test Condition
DD
DD
DD
DD
GS
DS
GS
GS
DS
= 0 V, V
= V
w 5 V, V
= 15 V, R
= 15 V, R
= 15 V, R
= 15 V, R
= 0 V, I
= 30 V, V
= 10 V, I
= 15 V, I
= 4.5 V, I
T
f = 1 MHz
I
GEN
GEN
S
C
GS
GS
GS
GS
I = 250 mA
I
GS
= 6.7 A
D
= 25_C
, I
100 A/ms T
= 250 mA
= 4.5 V, I
= 4.5 V, R
GS
= 0 V, T
= 10 V, I
= 10 V, R
D
= 0 V, f = 1 MHz
D
GS
= 250 mA
D
L
L
L
L
GS
D
= 250 mA
D
= "20 V
= 0.5 W
= 0.5 W
= 0.6 W
= 0.6 W
= 20 A
= 30 A
= 20 A
= 10 V
= 0 V
J
D
D
= 55_C
g
g
g
g
= 25 A
J
= 30 A
= 1 W
= 1 W
= 25_C
25_C
Min
1.2
30
50
0.0046
0.0062
Typ
– 6.3
3800
S–52237—Rev. A, 24-Oct-05
615
305
230
0.9
0.9
25
70
62
30
11
12
10
30
26
25
65
38
50
15
9
8
9
Document Number: 73540
0.0057
0.0078
"100
Max
345
100
100
55
2.4
1.4
1.5
10
95
45
18
15
45
12
40
40
14
60
1
c
mV/_C
mV/_C
Unit
nA
mA
pF
p
nC
nC
nC
ns
ns
ns
ns
ns
V
V
A
W
W
S
W
A
A
V
A