SUD50N06-09L-E3 Vishay, SUD50N06-09L-E3 Datasheet - Page 4

• Manufacturer Part Number: SUD50N06-09L-E3
• Description: MOSFET Power 60V 50A 136W 9.3mohm @ 10V
• Manufacturer: Vishay

Specifications of SUD50N06-09L-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0093 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 8300 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Continuous Drain Current Id: 50A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 12.2mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

SUD50N06-09L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
www.vishay.com
4
2.5
2.0
1.5
1.0
0.5
0.0
- 50 - 25
On-Resistance vs. Junction Temperature
V
I
D
GS
= 20 A
= 10 V
T
0
J
- Junction Temperature (°C)
25
50
75
100
125
150
175
100
10
1
Source-Drain Diode Forward Voltage
0.3
V
T
SD
J
= 150 °C
- Source-to-Drain Voltage (V)
0.6
S-71660-Rev. D, 06-Aug-07
Document Number: 72004
0.9
T
J
= 25 °C
1.2
1.5