sud50n06-16 Vishay, sud50n06-16 Datasheet
sud50n06-16
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sud50n06-16 Summary of contents
Page 1
... DS DS(on) 60 0.016 @ TO-252 Drain Connected to Tab Top View Ordering Information: SUD50N06-16 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage b b Continuous Drain Current (T Continuous Drain Current (T = 175_C) = 175_C Pulsed Drain Current Continuous Source Current (Diode Conduction) ...
Page 2
... SUD50N06-16 Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current g b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance ...
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... New Product 100 0.024 0.020 25_C 0.016 125_C 0.012 0.008 0.004 0.000 iss SUD50N06-16 Vishay Siliconix Transfer Characteristics 125_C C 20 25_C - 55_C Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current V ...
Page 4
... SUD50N06-16 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 2.0 1.5 1.0 0.5 0 Junction Temperature (_C) J THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature 60 50 Limited by 40 Package 100 T - Case Temperature (_C) ...
Page 5
... THERMAL RATINGS 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0. Document Number: 72396 S-31921—Rev. A, 15-Sep-03 New Product Normalized Thermal Transient Impedance, Junction-to-Case - Square Wave Pulse Duration (sec) SUD50N06-16 Vishay Siliconix 1 10 100 www.vishay.com 5 ...