SUD50N06-09L-E3 Vishay, SUD50N06-09L-E3 Datasheet

MOSFET Power 60V 50A 136W 9.3mohm @ 10V

SUD50N06-09L-E3

Manufacturer Part Number
SUD50N06-09L-E3
Description
MOSFET Power 60V 50A 136W 9.3mohm @ 10V
Manufacturer
Vishay
Datasheet

Specifications of SUD50N06-09L-E3

Transistor Polarity
N-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.0093 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
8300 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-252
Continuous Drain Current Id
50A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
12.2mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUD50N06-09L-E3
Manufacturer:
V1SHAY
Quantity:
20 000
Company:
Part Number:
SUD50N06-09L-E3
Quantity:
70 000
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 Board, t ≤ 10 sec.
c. t ≤ 10 sec.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72004
S-71660-Rev. D, 06-Aug-07
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Avalanche Energy (Duty Cycle ≤ 1 %)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
V
DS
60
(V)
Ordering Information: SUD50N06-09L
G
Top View
TO-252
D
N-Channel 60 V (D-S), 175 °C MOSFET, Logic Level
S
0.0122 at V
0.0093 at V
r
Drain Connected to Tab
DS(on)
J
= 175 °C)
SUD50N06-09L-E3 (Lead (Pb)-free)
a
GS
GS
(Ω)
= 4.5 V
= 10 V
b
C
I
D
= 25 °C, unless otherwise noted
50
50
(A)
a
Steady State
T
L = 0.1 mH
T
T
T
t ≤ 10 sec
C
C
C
A
= 100 °C
= 25 °C
= 25 °C
= 25 °C
FEATURES
• TrenchFET
• 175 °C Junction Temperature
G
N-Channel MOSFET
Symbol
Symbol
T
R
R
J
V
E
I
I
P
, T
DM
I
I
AS
thJA
thJC
GS
D
S
AS
D
S
D
®
stg
Power MOSFET
Typical
0.85
15
40
- 55 to 175
3
b
Limit
, 8.3
SUD50N06-09L
± 20
100
125
136
50
50
50
50
a
a
Maximum
b, c
Vishay Siliconix
1.1
18
50
www.vishay.com
RoHS*
COMPLIANT
°C/W
Unit
Unit
mJ
°C
W
V
A
Available
1

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SUD50N06-09L-E3 Summary of contents

Page 1

... GS 60 0.0122 4 TO-252 Drain Connected to Tab Top View Ordering Information: SUD50N06-09L SUD50N06-09L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Gate-Source Voltage b Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Single Avalanche Energy (Duty Cycle ≤ ...

Page 2

... SUD50N06-09L Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... V - Drain-to-Source Voltage (V) DS Capacitance Document Number: 72004 S-71660-Rev. D, 06-Aug- 0.015 °C C 0.012 25 °C 0.009 125 °C 0.006 0.003 0.000 iss SUD50N06-09L Vishay Siliconix 100 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics Drain Current (A) D On-Resistance vs. Drain Current 10 ...

Page 4

... SUD50N06-09L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 2 2.0 1.5 1.0 0.5 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature www.vishay.com 4 100 10 1 100 125 150 175 T = 150 ° °C J 0.3 0.6 0.9 1 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72004 S-71660-Rev ...

Page 5

... Document Number: 72004 S-71660-Rev. D, 06-Aug-07 1000 100 10 1 0.1 0.01 125 150 175 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case SUD50N06-09L Vishay Siliconix *r DS(on) Limited °C C Single Pulse 0 Drain-to-Source Voltage ( > minimum V at which r is specified ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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