sud50n06-08h Vishay, sud50n06-08h Datasheet
sud50n06-08h
Available stocks
Related parts for sud50n06-08h
sud50n06-08h Summary of contents
Page 1
... DS(on) 0.0078 TO-252 Drain Connected to Tab Top View Ordering Information: SUD50N06-08H0-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage b Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current, Single Pulse ...
Page 2
... SUD50N06-08H Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance ...
Page 3
... S-71661-Rev. B, 06-Aug-07 New Product 100 0.015 25 °C 0.012 125 °C 0.009 0.006 0.003 0.000 SUD50N06-08H Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...
Page 4
... SUD50N06-08H Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1.7 1.4 1.1 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature THERMAL RATINGS 125 100 75 50 Limited by Package 100 T - Case Temperature (°C) C Maximum Avalanche Drain Current vs. Case Temperature ...
Page 5
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...