SUD50N06-09L-E3 Vishay, SUD50N06-09L-E3 Datasheet - Page 3

• Manufacturer Part Number: SUD50N06-09L-E3
• Description: MOSFET Power 60V 50A 136W 9.3mohm @ 10V
• Manufacturer: Vishay

Specifications of SUD50N06-09L-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0093 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 8300 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Continuous Drain Current Id: 50A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 12.2mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C unless noted
Document Number: 72004
S-71660-Rev. D, 06-Aug-07
4000
3500
3000
2500
2000
1500
1000
500
100
120
100
80
60
40
20
80
60
40
20
0
0
0
0
0
0
C
rss
10
V
GS
10
V
2
V
DS
DS
= 10 thru 5 V
Output Characteristics
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
Transconductance
I
20
D
Capacitance
- Drain Current (A)
20
4
30
C
oss
30
6
C
40
iss
2 V, 3 V
T
C
4 V
40
8
= - 55 °C
50
125 °C
25 °C
10
60
50
0.015
0.012
0.009
0.006
0.003
0.000
100
10
80
60
40
20
8
6
4
2
0
0
0
0
0
V
I
D
V
DS
GS
= 50 A
On-Resistance vs. Drain Current
= 30 V
= 4.5 V
20
10
1
V
GS
Q
Transfer Characteristics
g
- Gate-to-Source Voltage (V)
I
D
- Total Gate Charge (nC)
-
25 °C
Gate Charge
40
T
20
Drain Current (A)
2
SUD50N06-09L
C
= 125 °C
Vishay Siliconix
60
30
3
- 55 °C
V
www.vishay.com
GS
80
40
= 10 V
4
100
50
5
3