FDMC2514SDC Fairchild Semiconductor, FDMC2514SDC Datasheet
FDMC2514SDC
Specifications of FDMC2514SDC
Available stocks
Related parts for FDMC2514SDC
FDMC2514SDC Summary of contents
Page 1
... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 2514S FDMC2514SDC ©2010 Fairchild Semiconductor Corporation FDMC2514SDC Rev.C2 TM ® PowerTrench SyncFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’ Advancements in both silicon and Dual Cool ...
Page 2
... Gate to Source Gate Charge gs Q Gate to Drain “Miller” Charge gd Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr ©2010 Fairchild Semiconductor Corporation FDMC2514SDC Rev. °C unless otherwise noted J Test Conditions mA mA, referenced to 25 ° ...
Page 3
... N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied. ≤ 22.5 A, di/dt ≤ 200 A/μs, V ≤ Starting DSS ©2010 Fairchild Semiconductor Corporation FDMC2514SDC Rev. °C/W when mounted pad copper 2 pad copper 2 pad copper 2 pad copper ...
Page 4
... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 125 1.0 1.5 2.0 2 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDMC2514SDC Rev. °C unless otherwise noted μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 100 125 150 200 100 ...
Page 5
... LIMITED BY r DS(on) SINGLE PULSE T = MAX RATED J 0 105 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDMC2514SDC Rev. °C unless otherwise noted 120 100 100 2000 1000 100 us 1ms 100 ...
Page 6
... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.0005 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDMC2514SDC Rev. °C unless otherwise noted J SINGLE PULSE 105 C/W θ RECTANGULAR PULSE DURATION (sec NOTES: ...
Page 7
... FDMC2514SDC di/dt = 300 100 TIME (ns) Figure 14. FDMC2514SDC SyncFET body diode reverse recovery characteristic ©2010 Fairchild Semiconductor Corporation FDMC2514SDC Rev.C2 (continued) Schottky barrier diodes exhibit significant leakage at high tem- perature and high reverse voltage. This will increase the power in the device μ ...
Page 8
... Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDMC2514SDC Rev.C2 8 www.fairchildsemi.com ...
Page 9
... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDMC2514SDC Rev.C2 F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...