FJX992TF Fairchild Semiconductor, FJX992TF Datasheet - Page 4

• Manufacturer Part Number: FJX992TF
• Description: Bipolar Small Signal PNP Epitaxial Silicon Transistor
• Manufacturer: Fairchild Semiconductor

Specifications of FJX992TF

• Dc Collector/base Gain Hfe Min: 150 to 700
• Gain Bandwidth Product Ft: 100 MHz
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Package / Case: SOT-323
• Collector- Emitter Voltage Vceo Max: - 120 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 100 mA
• Power Dissipation: 235 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FJX992 Rev. A0
© 2010 Fairchild Semiconductor Corporation
Typical Performance Characteristics
Figure 9. Forward Bias Safe Operating Area
Figure 7. Collector Output Capacitance
100
0.1
10
10
1
9
8
7
6
5
4
3
2
1
0.1
1
f = 1MHz
Icmax
Collector-Emitter Voltage, V
V
CB
1
2
[V], Collector-Base Voltage
FBSOA
3
10
4
Vceo(Max)
5
CE
6
[V]
7
100
8 9 10
(Continued)
4
Figure 10. Transient Thermal Resistance
1E-3
1E-4
0.01
0.1
Figure 8. Collector Input Capacitance
1
1E-5
100
10
1
1
D=1%
30%
50%
10%
5%
2%
f = 1MHz
1E-4
Single Pulse
1E-3
V
EB
[V], Collector-Base Voltage
0.01
t1, time(sec)
2
0.1
1
Rthja(t)=r(t)*Rthja
Rthja=530C/W
3
10
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4
100
1000
5