FJX992TF Fairchild Semiconductor, FJX992TF Datasheet - Page 3

• Manufacturer Part Number: FJX992TF
• Description: Bipolar Small Signal PNP Epitaxial Silicon Transistor
• Manufacturer: Fairchild Semiconductor

Specifications of FJX992TF

• Dc Collector/base Gain Hfe Min: 150 to 700
• Gain Bandwidth Product Ft: 100 MHz
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Package / Case: SOT-323
• Collector- Emitter Voltage Vceo Max: - 120 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 100 mA
• Power Dissipation: 235 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FJX992 Rev. A0
© 2010 Fairchild Semiconductor Corporation
Typical Performance Characteristics
Figure 3. Base-Emitter Saturation Voltage
Figure 5. Collector-Emitter Cutoff Current
1000
100
0.01
100
10
0.1
0.1
10
1
0.1
1
0.1
10
T
I
a
T
C
= 125
j
T
= 10 I
= 25
j
Figure 1. DC Current Gain
= 25
T
j
o
o
= 125
C
C
B
o
C
I
C
I
o
V
C
C
[mA], COLLECTOR CURRENT
T
T
T
T
CB
[mA], COLLECTOR CURRENT
T
j
T
j
j
j
j
= 100
= 100
= 75
= 25
j
= 125
[V], Collector-Base Voltage
= 75
1
T
1
j
= 75
o
o
C
o
o
C
o
o
C
C
C
T
C
j
= 100
o
C
o
C
10
10
100
V
CE
= 6V
100
100
3
Figure 2. Collector-Emitter Saturation Voltage
10000
Figure 6. Base-Emitter Cutoff Current
1000
0.01
100
0.1
0.1
50
40
30
20
10
10
Figure 4. Base-Emitter On Voltage
1
0
1
0.1
0.2
1
I
V
C
T
T
CE
j
= 10 I
j
= 25
= 125
= 6V
0.3
V
o
C
B
BE
o
C
(on) [V], BASE-EMITTER ON VOLTAGE
T
I
j
T
C
= 25
0.4
j
V
[mA], COLLECTOR CURRENT
T
T
T
= 75
T
T
j
j
j
EB
j
j
T
= 100
= 100
= 125
T
= 75
= 25
T
j
o
j
j
= 125
C
[V], Emitter-Base Voltage
1
= 75
o
= 100
C
0.5
o
o
o
o
o
C
C
C
C
C
o
o
C
C
o
2
C
0.6
0.7
10
3
0.8
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0.9
4
100
1.0
5