TGF2021-08 TriQuint, TGF2021-08 Datasheet - Page 3

• Manufacturer Part Number: TGF2021-08
• Description: RF GaAs DC-12GHz 8mm Pwr pHEMT (0.35um)
• Manufacturer: TriQuint

Specifications of TGF2021-08

• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 3 S
• Gate-source Breakdown Voltage: - 8 V
• Package / Case: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1031677

1/ Values in this table are scaled from measurements taken from a 1mm unit pHEMT cell at 10 GHz
2/ Optimum load impedance for maximum power or maximum PAE at 10 GHz
TriQuint Semiconductor: Phone [phone] Fax [phone] [e-mail] www.triquint.com
Efficiency Tuned:
Power Tuned:
θ
(channel to backside of
carrier)
SYMBOL
JC
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70°C baseplate temperature.
Γ
Γ
Gain
Gain
Psat
PAE
Psat
PAE
Thermal Resistance
L
L
2/
2/
Parameter
Load Reflection coefficient
Load Reflection coefficient
Saturated Output Power
Saturated Output Power
Power Added Efficiency
Power Added Efficiency
RF CHARACTERIZATION TABLE
PARAMETER
Power Gain
Power Gain
THERMAL INFORMATION
(T
Vd = 12 V
Idq = 600 mA
Pdiss = 7.2 W
A
Test Conditions
= 25 °C, Nominal)
TABLE III
TABLE IV
Idq = 600mA
0.923 ∠ 176.3
0.937 ∠ 173.7
Vd = 10V
39.8
11.5
50
11
39
59
(
T
148
o
1/
CH
C)
Idq = 600mA
0.921 ∠ 175.4
0.934 ∠ 173.1
Product Datasheet
Vd = 12V
(°C/W)
10.8
40.5
39.7
θ
48
11
55
11
JC
TGF2021-08
1.2 E+6
(HRS)
T
August 7, 2007
UNITS
M
dBm
dBm
dB
dB
%
%
-
-
Rev -
3