TGF2021-01 TriQuint, TGF2021-01 Datasheet
TGF2021-01
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TGF2021-01 Summary of contents
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... GHz Discrete power pHEMT Product Description The TriQuint TGF2021- discrete 1 mm pHEMT which operates from DC-12 GHz. The TGF2021-01 is designed using TriQuint’s proven standard 0.35um power pHEMT production process. The TGF2021-01 typically provides > 30 dBm of saturated output power with power gain of 11 dB. The ...
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... TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com TABLE I MAXIMUM RATINGS Parameter 1/ TABLE II DC PROBE CHARACTERISTICS = 25 °C, Nominal Minimum Typical - - -1.35 -30 -30 Product Datasheet August 7, 2007 TGF2021-01 Value Notes 12 470 dBm See note 150 °C 320 °C -65 to 150 °C Maximum Unit 300 - mA ...
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... TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com TABLE III RF CHARACTERIZATION TABLE = 25 °C, Nominal 10V PARAMETER Idq = 75mA 30.8 Power Gain 0.541 ∠ 147.9 11.5 Power Gain 0.643 ∠ 130.3 Product Datasheet August 7, 2007 TGF2021- 12V Idq = 75mA 31 0.546 ∠ 140 0.640 ∠ 125.9 UNITS ...
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... TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com TABLE IV THERMAL INFORMATION Test Conditions Idq = 75 mA Pdiss = 0.9 W Measured Fixtured Data IMD3 vs. output power/tone at 10 GHz Output power/tone (dBm) Product Datasheet August 7, 2007 TGF2021-01 θ (HRS) (°C/W) 148 86.5 1.2 E+6 ...
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... For efficiency tuned devices at 10GHz: Vd=12V, Idq=75mA: Γ = 0.640, θ = 126° L Vd=10V, Idq=75mA: Γ = 0.643, θ = 130° L Product Datasheet August 7, 2007 TGF2021-01 Vd=12V, Id=75mA Vd=10V, Id=75mA Input Power (dBm) Vd=12V, Id=75mA Vd=10V, Id=75mA Input Power (dBm) ...
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... Product Datasheet TGF2021-01 L Drain Unit pHEMT cell Reference Plane Source Gate Drain UPC L - via = 0.0135 nH (2x) Source Vd = 10V Vd = 12V Idq = 100mA Idq = 75mA 0.450 0.45 ...
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... Product Datasheet August 7, 2007 TGF2021-01 s12 ang s22 s22 ang deg dB deg 57.93 -5.656 -27.36 38.19 -7.703 -43.13 27.10 -9.305 -51.41 20.33 -10.338 -56.61 15 ...
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... GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handing, assembly and test. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com Mechanical Drawing (Vg) 0.090 x 0.090 (0.004 x 0.004) (Vd) 0.090 x 0.090 (0.004 x 0.004) Product Datasheet August 7, 2007 TGF2021- 0.248 [0.010] 8 Rev - ...
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... Aluminum wire should not be used. • Devices with small pad sizes should be bonded with 0.0007-inch wire. • Maximum stage temperature is 200 °C. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com Assembly Process Notes Product Datasheet August 7, 2007 TGF2021-01 9 Rev - ...