TGF2021-08 TriQuint, TGF2021-08 Datasheet - Page 2

• Manufacturer Part Number: TGF2021-08
• Description: RF GaAs DC-12GHz 8mm Pwr pHEMT (0.35um)
• Manufacturer: TriQuint

Specifications of TGF2021-08

• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 3 S
• Gate-source Breakdown Voltage: - 8 V
• Package / Case: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1031677

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TriQuint Semiconductor: Phone [phone] Fax [phone] [e-mail] www.triquint.com
Symbol
Symbol
Note: For TriQuint’s 0.35um power pHEMT devices, RF breakdown >> DC breakdown
T
| I
T
P
P
T
V
V
V
V
Idss
STG
These ratings represent the maximum operable values for this device.
Combinations of supply voltage, supply current, input power, and output power shall
not exceed P
Junction operating temperature will directly affect the device median time to failure
(T
at the lowest possible levels.
Gm
I
CH
G
V
+
IN
M
BGD
D
BGS
+
-
M
P
For a median life time of 1E+6 hrs, Power dissipation is limited to:
|
). For maximum life, it is recommended that junction temperatures be maintained
Positive Supply Voltage
Negative Supply Voltage Range
Positive Supply Current
Gate Supply Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
Saturated Drain Current
P
Breakdown Voltage
Breakdown Voltage
D
Transconductance
Pinch-off Voltage
(max) = (150 °C – TBASE °C) / 10.8 (°C/W)
D
.
Gate-Source
Parameter
Gate-Drain
DC PROBE CHARACTERISTICS
Parameter 1/
(T
A
MAXIMUM RATINGS
= 25 °C, Nominal)
TABLE II
Minimum
TABLE I
-1.35
-30
-35
-
-
Typical
2400
3000
-1
-
-
-65 to 150 °C
See note 3
-5V to 0V
Maximum
34 dBm
150 °C
320 °C
Value
12.5 V
56 mA
3.8 A
Product Datasheet
-0.65
-15
-8
-
-
TGF2021-08
Unit
mA
mS
V
V
V
August 7, 2007
Notes
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Rev -
2